UCC21750 Driver Datasheet

UCC21750 Datasheet, PDF, Equivalent


Part Number

UCC21750

Description

10-A Source/Sink Reinforced Isolated Single Channel Gate Driver

Manufacture

etcTI

Total Page 30 Pages
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UCC21750
SLUSD78B – OCTOBER 2018 – REVISED DECEMBER 2019
UCC21750 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver
for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
1 Features
1 5.7-kVRMS single channel isolated gate driver
• SiC MOSFETs and IGBTs up to 2121Vpk
• 33-V maximum output drive voltage (VDD-VEE)
• ±10-A drive strength and split output
• 150-V/ns minimum CMTI
• 200-ns response time fast DESAT protection
• 4-A Internal active miller clamp
• 400-mA soft turn-off when fault happens
• Isolated analog sensor with PWM output for
– Temperature sensing with NTC, PTC or
thermal diode
– High voltage DC-Link or phase voltage
• Alarm FLT on over current and reset from
RST/EN
• Fast enable/disable response on RST/EN
• Reject <40-ns noise transient and pulse on input
pins
• 12-V VDD UVLO with power good on RDY
• Inputs/outputs with over/under-shoot transient
voltage Immunity up to 5 V
• 130-ns (maximum) propagation delay and 30-ns
(maximum) pulse/part skew
• SOIC-16 DW package with creepage and
clearance distance > 8mm
• Operating junction temperature –40°C to 150°C
2 Applications
• Industrial motor drives
• Server, telecom, and industrial power supplies
• Uninterruptible power supplies (UPS)
• Solar inverters
The input side is isolated from the output side with
SiO2 capacitive isolation technology, supporting up to
1.5-kVRMS working voltage, 12.8-kVPK surge immunity
with longer than 40 years Isolation barrier life, as well
as providing low part-to-part skew, and >150V/ns
common mode noise immunity (CMTI).
The UCC21750 includes the state-of-art protection
features, such as fast overcurrent and short circuit
detection, shunt current sensing support, fault
reporting, active miller clamp, and input and output
side power supply UVLO to optimize SiC and IGBT
switching behavior and robustness. The isolated
analog to PWM sensor can be utilized for easier
temperature or voltage sensing, further increasing the
drivers' versatility and simplifying the system design
effort, size and cost.
PART NUMBER
UCC21750
Device Information(1)
PACKAGE
BODY SIZE (NOM)
DW SOIC-16
10.3 mm × 7.5 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Device Pin Configuration
AIN
DESAT
COM
OUTH
VDD
OUTL
CLMPI
VEE
1
2
3
4
5
6
7
8
16 APWM
15 VCC
14 RST/EN
13 FLT
12 RDY
11 ,1Å
10 IN+
9 GND
3 Description
The UCC21750 is a galvanic isolated single channel
gate driver designed for SiC MOSFETs and IGBTs up
to 2121-V DC operating voltage with advanced
protection features, best-in-class dynamic
performance and robustness. UCC21750 has up to
±10-A peak source and sink current.
Not to scale
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

UCC21750
UCC21750
SLUSD78B – OCTOBER 2018 – REVISED DECEMBER 2019
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ..................................... 5
6.2 ESD Ratings ............................................................ 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information .................................................. 5
6.5 Power Ratings........................................................... 6
6.6 Insulation Specifications............................................ 7
6.7 Safety-Related Certifications..................................... 8
6.8 Safety Limiting Values .............................................. 8
6.9 Electrical Characteristics........................................... 9
6.10 Switching Characteristics ...................................... 11
6.11 Insulation Characteristics Curves ......................... 12
6.12 Typical Characteristics .......................................... 13
7 Parameter Measurement Information ................ 17
7.1 Propagation Delay................................................... 17
7.2 Input Deglitch Filter ................................................. 19
7.3 Active Miller Clamp ................................................. 20
7.4 Under Voltage Lockout (UVLO) .............................. 21
7.5 Desaturation (DESAT) Protection ........................... 23
8 Detailed Description ............................................ 25
8.1 Overview ................................................................. 25
8.2 Functional Block Diagram ....................................... 26
8.3 Feature Description................................................. 26
8.4 Device Functional Modes........................................ 33
9 Applications and Implementation ...................... 34
9.1 Application Information............................................ 34
9.2 Typical Application .................................................. 34
10 Power Supply Recommendations ..................... 45
11 Layout................................................................... 46
11.1 Layout Guidelines ................................................. 46
11.2 Layout Example .................................................... 47
12 Device and Documentation Support ................. 48
12.1 Documentation Support ....................................... 48
12.2 Receiving Notification of Documentation Updates 48
12.3 Community Resource............................................ 48
12.4 Trademarks ........................................................... 48
12.5 Electrostatic Discharge Caution ............................ 48
12.6 Glossary ................................................................ 48
13 Mechanical, Packaging, and Orderable
Information ........................................................... 48
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (April 2019) to Revision B
Page
• Changed marketing status from Advance Information to production data. ............................................................................ 1
2 Submit Documentation Feedback
Product Folder Links: UCC21750
Copyright © 2018–2019, Texas Instruments Incorporated


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity UCC21750 SLUSD78B – OCTOBER 2 018 – REVISED DECEMBER 2019 UCC21750 10-A Source/Sink Reinforced Isolated Si ngle Channel Gate Driver for SiC/IGBT w ith Active Protection, Isolated Analog Sensing and High-CMTI 1 Features •1 5.7-kVRMS single channel isolated gate driver • SiC MOSFETs and IGBTs up to 2121Vpk • 33-V maximum output drive v oltage (VDD-VEE) • ±10-A drive stren gth and split output • 150-V/ns minim um CMTI • 200-ns response time fast D ESAT protection • 4-A Internal active miller clamp • 400-mA soft turn-off when fault happens • Isolated analog sensor with PWM output for – Temperat ure sensing with NTC, PTC or thermal di ode – High voltage DC-Link or phase v oltage • Alarm FLT on over current an d reset from RST/EN • Fast enable/dis able response on RST/EN • Reject <40- ns noise transient and pulse on input p ins • 12-V VDD UVLO with power good on RDY • Inputs/outputs with over/under-shoot transient volt.
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