SiSF20DN MOSFET Datasheet

SiSF20DN Datasheet, PDF, Equivalent


Part Number

SiSF20DN

Description

Drain Dual N-Channel 60V (S1-S2) MOSFET

Manufacture

Vishay

Total Page 8 Pages
Datasheet
Download SiSF20DN Datasheet


SiSF20DN
www.vishay.com
SiSF20DN
Vishay Siliconix
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET
PowerPAK® 1212-8SCD
S1
S1
8
S2
S2
6
7
5
S2
S1
3.3 mm
1 3.3 mm
Top View
PRODUCT SUMMARY
VS1S2 (V)
RS1S2(on) max. () at VGS = 10 V
RS1S2(on) max. () at VGS = 4.5 V
Qg typ. (nC)
IS1S2 (A)
Configuration
1
4
G2
3
D2
2
D1
G1
Bottom View
60
0.0130
0.0185
10.2 g
52 a
Common - Drain
FEATURES
• TrenchFET® Gen IV power MOSFET
• Very low source-to-source on resistance
• Integrated common-drain n-channel MOSFETs
in a compact and thermally enhanced package
• 100 % Rg and UIS tested
• Optimizes circuit layout for bi-directional current flow
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery protection switch
• Bi-directional switch
• Load switch
G1
N-Channel 1 MOSFET
• 24 V systems
N-Channel 2 MOSFET
G2
S1
S2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SCD
SiSF20DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
VS1S2
VGS
IS1S2
IS1S2M
PS1S2
TJ, Tstg
LIMIT
60
± 20
52
41
14 b, c
11 b, c
100
69.4
44.4
5.2 b, c
3.3 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
Maximum junction-to-case (drain)
t 10 s
Steady state
SYMBOL
RthJA
RthJC
TYPICAL
19
1.4
MAXIMUM
24
1.8
UNIT
°C/W
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 63 °C/W
g. Single MOSFET
S18-1210-Rev. A, 10-Dec-2018
1
Document Number: 76915
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiSF20DN
www.vishay.com
SiSF20DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b, c
VDS
VGS(th)
IGSS
IDSS
IS1S2(on)
RS1S2(on)
gfs
VGS = 0 V, ID = 250 μA
VS1S2 = VGS, ID = 250 μA
VS1S2 = 0 V, VGS = ± 20 V
VS1S2 = 60 V, VGS = 0 V
VS1S2 = 60 V, VGS = 0 V, TJ = 70 °C
VS1S2 10 V, VGS = 10 V
VGS = 10 V, IS1S2 = 7 A
VGS = 4.5 V, IS1S2 = 5 A
VS1S2 = 10 V, IS1S2 = 25 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Ciss
Coss
Crss
Qg
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID =5 A
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-Source Body Diode Characteristics c
Continuous source-drain diode current
Pulse diode forward current
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
IS1S2
IS1S2M
trr
Qrr
ta
tb
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. On single MOSFET
VDS = 30 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
VDD = 30 V, RL = 6 , IS1S2 5 A,
VGEN = 10 V, Rg = 1
VDD = 30 V, RL = 6 , ID 5 A,
VGEN = 4.5 V, Rg = 1
TC = 25 °C
IF = 5 A, di/dt = 100 A/μs,
TJ = 25 °C
MIN. TYP. MAX. UNIT
60 -
1-
-
V
3
- - ± 100 nA
- -1
μA
- - 15
20 -
-A
- 0.0100 0.0130
- 0.0140 0.0185
- 75 - S
- 1290 -
- 340 - pF
-8-
- 22 33
- 10.2 16
nC
- 3.9 -
- 2.9 -
0.14 0.7 1.4
- 10 20
- 5 10
- 19 40
- 5 10
ns
- 15 30
- 50 100
- 24 50
- 7 15
- - 52
A
- - 100
- 30 60 ns
- 18 35 nC
- 15 -
ns
- 15 -
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1210-Rev. A, 10-Dec-2018
2
Document Number: 76915
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiSF20DN Vishay Siliconi x Common - Drain Dual N-Channel 60 V ( S1-S2) MOSFET PowerPAK® 1212-8SCD S1 S1 8 S2 S2 6 7 5 S2 S1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VS1 S2 (V) RS1S2(on) max. () at VGS = 10 V RS1S2(on) max. () at VGS = 4.5 V Qg typ. (nC) IS1S2 (A) Configuration 1 4 G2 3 D2 2 D1 G1 Bottom View 60 0.0130 0.0185 10.2 g 52 a Common - Dra in FEATURES • TrenchFET® Gen IV pow er MOSFET • Very low source-to-source on resistance • Integrated common-dr ain n-channel MOSFETs in a compact and thermally enhanced package • 100 % Rg and UIS tested • Optimizes circuit l ayout for bi-directional current flow Material categorization: for definit ions of compliance please see www.visha y.com/doc?99912 APPLICATIONS • Batt ery protection switch • Bi-direction al switch • Load switch G1 N-Channel 1 MOSFET • 24 V systems N-Channel 2 MOSFET G2 S1 S2 ORDERING INFORMATI ON Package Lead (Pb)-free and halogen-free PowerPAK 1212-8SCD SiSF20DN-T1-GE3 ABSOLUTE .
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