UP1851 TRANSISTORS Datasheet

UP1851 Datasheet, PDF, Equivalent


Part Number

UP1851

Description

HIGH CURRENT TRANSISTORS

Manufacture

UTC

Total Page 4 Pages
Datasheet
Download UP1851 Datasheet


UP1851
UNISONIC TECHNOLOGIES CO., LTD
UP1851
PNP SILICON TRANSISTOR
HIGH CURRENT
(HIGH PERFORMANCE)
TRANSISTORS
„ FEATURES
* 5 A continuous current , up to 15 A peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10A
* PD = 3W
1
SOT-223
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP1851L-AA3-R
UP1851G-AA3-R
Package
SOT-223
Pin Assignment
123
BCE
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 4
QW-R207-018.B

UP1851
UP1851
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
-100
-60
V
V
Emitter-Base Voltage
Peak Pulse Current
VEBO
ICM
-6 V
-15 A
Continuous Collector Current
Power Dissipation (TA=25°C)
IC -5 A
PD 3 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT)
VBE(ON)
DC Current Gain (Note)
hFE
Transition Frequency
fT
Output Capacitance
COBO
Switching Times
tON
tOFF
Note: Pulse width=300μs. Duty cycle2%
TEST CONDITIONS
IC=-100μ A
IC=-1μA, RB1K
IC=-10mA (Note)
IE=-100μA
VCB=-80V
VCB=-80V, R1k
VEB=-6V
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
IC=-5A, IB=-500mA (Note)
IC=-5A, VCE=-1V (Note)
IC=-10mA, VCE=-1V
IC=-2A, VCE=-1V
IC=-5A, VCE=-1V
IC=-10A, VCE=-1V
IC=-100mA, VCE=-10V, f=50MHz
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA
IB2=200mA, VCC=-10V
MIN
-100
-100
-60
-6
100
100
75
10
TYP MAX
-140
-140
-90
-8
-150
-150
-50
-20 -50
-85 -140
-155 -210
-370 -460
-1080 -1240
-935 -1070
200
200 300
90
25
120
74
82
350
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
MHz
pF
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-018.B


Features UNISONIC TECHNOLOGIES CO., LTD UP1851 PNP SILICON TRANSISTOR HIGH CURRENT (H IGH PERFORMANCE) TRANSISTORS „ FEATUR ES * 5 A continuous current , up to 15 A peak current * Very low saturation vo ltages * Excellent gain characteristics specified up to 10A * PD = 3W 1 SOT-2 23 „ ORDERING INFORMATION Ordering N umber Lead Free Halogen Free UP1851L -AA3-R UP1851G-AA3-R Package SOT-223 Pin Assignment 123 BCE Packing Tape R eel www.unisonic.com.tw Copyright © 2 012 Unisonic Technologies Co., Ltd 1 o f 4 QW-R207-018.B UP1851 PNP SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Col lector-Base Voltage Collector-Emitter V oltage VCBO VCEO -100 -60 V V Emitt er-Base Voltage Peak Pulse Current VEB O ICM -6 V -15 A Continuous Collector Current Power Dissipation (TA=25°C) IC -5 A PD 3 W Junction Temperature St orage Temperature TJ TSTG +150 -55 ~ +150 ℃ ℃ Note: Absolute maximum r atings are those values beyond which the device could be permanently dam.
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