10N60K-MTQ MOSFET Datasheet

10N60K-MTQ Datasheet, PDF, Equivalent


Part Number

10N60K-MTQ

Description

N-CHANNEL POWER MOSFET

Manufacture

UTC

Total Page 6 Pages
Datasheet
Download 10N60K-MTQ Datasheet


10N60K-MTQ
UNISONIC TECHNOLOGIES CO., LTD
10N60K-MTQ
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N60K-MTQ is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.0 @ VGS = 10 V, ID = 5.0 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
GD S
GD S
Packing
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-329.B

10N60K-MTQ
10N60K-MTQ
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
Continuous Drain Current
VGSS
ID
±30
10
V
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
IDM 40 A
IAR 8.0 A
Avalanche Energy
Single Pulsed (Note 3)
EAS
365 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
156 W
Power Dissipation
TO-220F1
PD
50 W
TO-220F2
52 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 11.4mH, IAS = 8.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 10A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATING
62.5
0.8
2.5
2.4
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R205-329.B


Features UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Q 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MTQ is a hig h voltage power MOSFET designed to have better characteristics, such as fast s witching time, low gate charge, low on- state resistance and high rugged avalan che characteristics. This power MOSFET is usually used in high speed switching applications of switching power suppli es and adaptors.  FEATURES * RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * F ast switching capability * Avalanche en ergy tested * Improved dv/dt capability , high ruggedness  SYMBOL Power MOS FET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Packa ge 10N60KL-TF3-T 10N60KG-TF3-T TO-22 0F 10N60KL-TF1-T 10N60KG-TF1-T TO-22 0F1 10N60KL-TF2-T 10N60KG-TF2-T TO-2 20F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S Packing Tube Tube Tube MARKING www.unisonic.com.tw Copyrigh t © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-329.B 10N60K-MTQ .
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