FDPF7N50U MOSFET Datasheet

FDPF7N50U Datasheet, PDF, Equivalent


Part Number

FDPF7N50U

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FDPF7N50U Datasheet


FDPF7N50U
FDPF7N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 5 A, 1.5
Features
Description
• RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A
• Low Gate Charge (Typ.12.8 nC)
• Low Crss (Typ. 9 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
G
D
S
TO-220
Absolute Maximum Ratings
GDS
TO-220F
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
G
S
FDPF7N50U
500
5*
3.0 *
20 *
30
125
5
8.9
20
31.3
0.25
-55 to +150
300
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2009 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FDPF7N50U
4.0
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
Publication Order Number:
FDPF7N50U/D

FDPF7N50U
Package Marking and Ordering Information
Device Marking
FDPF7N50U
Device
FDPF7N50U
Package
TO-220F
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250A
ID = 250A, Referenced to 25C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250A
VGS = 10V, ID = 2.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.5A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 5A
RG = 25
VDS = 400V, ID = 5A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 5A
dIF/dt =100A/s
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
1.2
2.5
720
95
9
6
55
25
35
12.8
3.7
5.8
--
--
--
40
0.04
Max Unit
--
--
25
250
100
-100
V
V/C
A
A
nA
nA
5.0 V
1.5
-- S
940 pF
190 pF
13.5 pF
20
120
60
80
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
5A
20 A
1.6 V
-- ns
-- C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5A, VDD = 50V, L=10mH, RG = 25, Starting TJ = 25C
3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
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Features FDPF7N50U N-Channel UniFETTM Ultra FRFET TM MOSFET FDPF7N50U N-Channel UniFETT M Ultra FRFETTM MOSFET 500 V, 5 A, 1.5  Features Description • RDS(on ) = 1.5  (Max.) @ VGS = 10 V, ID = 2 .5 A • Low Gate Charge (Typ.12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avala nche Tested • Improved dv/dt Capabili ty Applications • LCD/LED TV • Ligh ting • Uninterruptible Power Supply AC-DC Power Supply UniFETTM MOSFET is ON Semiconductor’s high voltage MO SFET family based on planar stripe and DMOS technology. This MOSFET is tailore d to reduce on-state resistance, and to provide better switching performance a nd higher avalanche energy strength. Un iFET Ultra FRFETTM MOSFET has much supe rior body diode reverse recovery perfor mance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 2 00nsec and 4.5V/nsec respectively. Ther efore UniFET Ultra FRFET MOSFET can rem ove additional component and improve system reliability in certain applications that re.
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