BTP1955L3

CYStech Electronics Corp. Spec. No. : C811L3 Issued Date : 2007.09.04 Revised Date : 2009.09.23 Page No. : 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTP1955L3 Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Ptot=3Watts Extremely low equivalent on resistance, RCE(SAT)=75mΩ at 3A Pb-free package Symbol BTP1955L3 Outline SOT-223 C B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @TA=25°C ESD susceptibility Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB Pd Tj ; Tstg Limits -180 -140 -6 -4 -10 -1 3 (Note 1) 4000 (Note 2) -55 ~ +150 Unit V V V A A A W V °C Note: 1.The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. 2.Human body model, 1.5kΩ in series with 100pF BTP1955L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C811L3 Issued Date : 2007.09.04 Revised Date : 2009.09.23 Page No. : 2/6 Characteristics (Ta=25°C, unless otherwise specified) Symbol BVCBO BVCER *BVCEO BVEBO ICBO ICER IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) hFE1 hFE2 *hFE3 *hFE4 fT Cob ton toff Min. -180 -180 -140 -6 - - 100 ...