BTP1955L3 Transistor Datasheet

BTP1955L3 Datasheet, PDF, Equivalent


Part Number

BTP1955L3

Description

PNP Epitaxial Planar High Current Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTP1955L3 Datasheet


BTP1955L3
CYStech Electronics Corp.
Spec. No. : C811L3
Issued Date : 2007.09.04
Revised Date : 2009.09.23
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP1955L3
Features
4 Amps continuous current, up to 10 Amps peak current
Very low saturation voltage
Excellent gain characteristics specified up to 3 Amps
Ptot=3Watts
Extremely low equivalent on resistance, RCE(SAT)=75mΩ at 3A
Pb-free package
Symbol
BTP1955L3
Outline
SOT-223
C
BBase
CCollector
EEmitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @TA=25°C
ESD susceptibility
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj ; Tstg
Limits
-180
-140
-6
-4
-10
-1
3 (Note 1)
4000 (Note 2)
-55 ~ +150
Unit
V
V
V
A
A
A
W
V
°C
Note: 1.The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
2.Human body model, 1.5kΩ in series with 100pF
BTP1955L3
CYStek Product Specification

BTP1955L3
CYStech Electronics Corp.
Spec. No. : C811L3
Issued Date : 2007.09.04
Revised Date : 2009.09.23
Page No. : 2/6
Characteristics (Ta=25°C, unless otherwise specified)
Symbol
BVCBO
BVCER
*BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
hFE1
hFE2
*hFE3
*hFE4
fT
Cob
ton
toff
Min.
-180
-180
-140
-6
-
-
-
-
-
-
-
-
-
100
100
75
-
-
-
Typ.
-210
-210
-170
-8
-
-
-
-30
-60
-100
-220
-900
-830
-
-
-
10
110
40
68
1030
Max.
-
-
-
-
-50
-50
-10
-60
-120
-150
-370
-1110
-950
-
500
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
-
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=-100μA
IC=-1μA, RBE1kΩ
IC=-10mA
IE=-100μA
VCB=-150V
VCE=-150V, RBE1kΩ
VEB=-6V
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
VCE=-5V, IC=-3A
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-3A
VCE=-5V, IC=-10A
VCE=-10V, IC=-100mA, f=50MHz
VCB=-20V, f=1MHz
IC=-1A, IB1=-100mA, IB2=100mA,
VCC=-50V
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE 2
Rank
Range
Q
100~270
R
180~390
S
270~500
Ordering Information
Device
BTP1955L3
Package
SOT-223
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
1955
Moisture Sensitivity Level : Conform to JEDEC Level 3
Recommended Storage Condition:
Temperature : 30 °C
Humidity : 60% RH
BTP1955L3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 811L3 Issued Date : 2007.09.04 Revised Date : 2009.09.23 Page No. : 1/6 PNP E pitaxial Planar High Current (High Perf ormance) Transistor BTP1955L3 Features • 4 Amps continuous current, up to 1 0 Amps peak current • Very low satura tion voltage • Excellent gain charact eristics specified up to 3 Amps • Pto t=3Watts • Extremely low equivalent o n resistance, RCE(SAT)=75mΩ at 3A • Pb-free package Symbol BTP1955L3 Outl ine SOT-223 C B:Base C:Collector E :Emitter E C B Absolute Maximum Rat ings (Ta=25°C) Parameter Collector-Ba se Voltage Collector-Emitter Voltage Em itter-Base Voltage Continuous Collector Current Peak Collector Current Base Cu rrent Power Dissipation @TA=25°C ESD s usceptibility Operating and Storage Tem perature Range Symbol VCBO VCEO VEBO I C ICP IB Pd Tj ; Tstg Limits -180 -140 -6 -4 -10 -1 3 (Note 1) 4000 (Note 2) -55 ~ +150 Unit V V V A A A W V °C N ote: 1.The power which can be dissipated assuming the device is mounted in a typical .
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