RSA6.1EN diode Datasheet

RSA6.1EN Datasheet, PDF, Equivalent


Part Number

RSA6.1EN

Description

ESD Protection diode

Manufacture

ROHM

Total Page 5 Pages
Datasheet
Download RSA6.1EN Datasheet


RSA6.1EN
Diodes
ESD Protection diode
RSA6.1EN
RSA6.1EN
zApplication
ESD Protection
zFeatures
1) Small mold type. (UMD5)
2) High reliability.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.0±0.2
0.25±0.1
0.05
各リードとも
Eachleadhas same dimension
(5) (4)
0.15±0.05
zLead size figure (Unit : mm)
0.35
(1) (2)
0.65
0.65
1.3±0.1
(3)
0~0.1
0.7
0.9±0.1
ROHM : UMD5
JEDEC : SOT-353
JEITA : SC-88A
dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
0.65 0.65
UMD5
zStructure
0.3±0.1
2.25±0.1
    0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Peak Pulse Power-1(tp=10×1000us)
Peak Pulse Power-2(tp=8×20us)
Junction temperature
Storage temperature
Symbol
P
Ppk
Ppk
Tj
Tstg
4.0±0.1
φ1.1±0.1
Limits
200
30
200
150
-55 to +150
Unit
mW
W
W
1.15±0.1
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Zener voltage
Reverse current
VZ
IR
Forward voltage
VF
Capacitance between terminals
Ct
Min.
6.1
-
-
-
Typ.
-
-
-
90
Max.
7.20
1.0
1.25
-
Unit Conditions
V IZ=1mA
µA VR=3.0V
V IF=200mA
pF f=1MHz,VR=0V
Rev.C
1/2

RSA6.1EN
Diodes
RSA6.1EN
zElectrical characteristic curves (Ta=25°C)
10
1
0.1
0.01
0.001
6
1000
100
Ta=25℃
Ta=-25℃
Ta=75℃
Ta=125℃
Ta=150℃
10
1
0.1
0.01
0.001
0.0001
6.5 7 7.5
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
0.00001
80
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.5 1 1.5 2 2.5
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
3
1000
100
10
1
0
f=1MHz
0.5 1 1.5 2 2.5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
3
7.2 0.2
150
7.1
Ta=25℃
IZ=1mA
0.18
0.16
Ta=25℃
VR=3V
140
130
n=30pcs
0.14
n=30pcs
120
7 0.12
110
0.1 100
6.9 0.08
90
0.06 AVE:0.0190nA
80
6.8 0.04
70
AVE:6.891V
0.02
60
6.7 0
50
Vz DISRESION MAP
IR DISRESION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:99.8pF
Ct DISRESION MAP
100 1000
Rth(j-a)
10
1
0.1 1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
100
Rth(j-c)
Mounted on epoxy board
10
IM=10mA
IF=100mA
1ms time
300us
1
10 0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
Rev.C
2/2


Features Diodes ESD Protection diode RSA6.1EN RS A6.1EN zApplication ESD Protection zFe atures 1) Small mold type. (UMD5) 2) Hi gh reliability. zConstruction Silicon e pitaxial planar zExternal dimensions ( Unit : mm) 2.0±0.2 0.25±0.1 0.05 ードとも Eachleadhas same dimensi on (5) (4) 0.15±0.05 zLead size fig ure (Unit : mm) 0.35 1.25±0.1 2.1±0. 1 0.1Min 0.9 1.6 (1) (2) 0.65 0.65 1.3±0.1 (3) 0~0.1 0.7 0.9±0.1 RO HM : UMD5 JEDEC : SOT-353 JEITA : SC-88 A dot (year week factory) zTaping dime nsions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1       0 0.65 0 .65 UMD5 zStructure 0.3±0.1 1.75±0.1 8.0±0.2 2.4±0.1 2.4±0.1 5.5±0.2 3.5±0.05 2.45±0.1 0~0.5 2.25±0 .1     0 zAbsolute maximum ratin gs (Ta=25°C) Parameter Power dissipati on Peak Pulse Power-1(tp=10×1000us) Pe ak Pulse Power-2(tp=8×20us) Junction t emperature Storage temperature Symbol P Ppk Ppk Tj Tstg 4.0±0.1 φ1.1±0.1 Limits 200 30 200 150 -55 to +150 Unit mW W W ℃ ℃ 1.15±0.1 zElectrical characteristics (Ta=25°C) Parameter Symbo.
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