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1N5807US

EIC

ULTRAFAST RECOVERY RECTIFIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 1N5807US - 1N5811US PRV : 50 - 150 Volts Io : 6.0 Amp...


EIC

1N5807US

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 1N5807US - 1N5811US PRV : 50 - 150 Volts Io : 6.0 Amperes ULTRAFAST RECOVERY RECTIFIER DIODES SMB (DO-214AA) FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ultrafast recovery time * Pb / RoHS Free MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram 5.30 ± 0.22 4.65 ± 0.30 1.14 ± 0.38 0.1 ± 0.1 2.1 ± 0.15 3.62 ± 0.32 0.22 ± 0.07 2.28 ± 0.15 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 100µA Maximum Average Forward Current Maximum Forward Surge Current (3) Maximum Peak Forward Voltage at IF = 4.0 A. Maximum Reverse Current at VRWM Ta = 25 °C Ta = 100 °C Maximum Reverse Recovery Time (4) Thermal Resistance, Junction to Lead Junction Temperature Range Storage Temperature Range SYMBOL VRW M VBR(Min) IF(AV) IFSM VF IR IR(H) Trr RӨJL TJ TSTG 1N5807US 1N5809US 1N5811US 50 100 150 60 110 160 6.0 (1) 3.0 (2) 125 0.875 5.0 150 30 22 - 65 to + 175 - 65 to + 175 UNIT V V A A V μA ns °C/W °C °C Notes : (1) Rated at TL=75 °C. Derate at 60 mA/°C for TL above 75 °C. (2) Derate linearly at 25 ...




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