RECTIFIER DIODES. 1N5807US Datasheet

1N5807US DIODES. Datasheet pdf. Equivalent

1N5807US Datasheet
Recommendation 1N5807US Datasheet
Part 1N5807US
Description ULTRAFAST RECOVERY RECTIFIER DIODES
Feature 1N5807US; www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 1N5807US - 1N5811US PRV : 50 - 15.
Manufacture EIC
Datasheet
Download 1N5807US Datasheet





EIC 1N5807US
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
1N5807US - 1N5811US
PRV : 50 - 150 Volts
Io : 6.0 Amperes
ULTRAFAST RECOVERY
RECTIFIER DIODES
SMB (DO-214AA)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ultrafast recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
1.14 ± 0.38
0.1 ± 0.1
2.1 ± 0.15
3.62 ± 0.32
0.22 ± 0.07
2.28 ± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100µA
Maximum Average Forward Current
Maximum Forward Surge Current (3)
Maximum Peak Forward Voltage at IF = 4.0 A.
Maximum Reverse Current at VRWM
Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time (4)
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRW M
VBR(Min)
IF(AV)
IFSM
VF
IR
IR(H)
Trr
RӨJL
TJ
TSTG
1N5807US 1N5809US 1N5811US
50 100 150
60 110 160
6.0 (1)
3.0 (2)
125
0.875
5.0
150
30
22
- 65 to + 175
- 65 to + 175
UNIT
V
V
A
A
V
μA
ns
°C/W
°C
°C
Notes :
(1) Rated at TL=75 °C. Derate at 60 mA/°C for TL above 75 °C.
(2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where TJ(max) dose not exceed 175 °C.
(3) Ta = 25 °C @ IF(AV) = 3A and VRWM for ten 8.3 ms surges at 1 minute intervals.
(4) IF = 1A, IRM = 1A, IR(REC) = 0.1 A and di/dt = 10 A/μs min.
Page 1 of 2
Rev. 01 : September 28, 2012



EIC 1N5807US
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( 1N5807US - 1N5811US )
FIG. 1 - OUTPUT CURRENT VS.
LEAD TEMPERATURE
10
8 L = 3/8"
6
4
2
L = Lead length from body
0
25 50 75 100 125 150 175
LEAD TEMPERATURE, (°C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0 Ta = 25 °C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE, (V)
FIG.2 - MULTIPLE SURGE CURRENT
VS. DURATION
100
80
60
40
20
0
1 10 100
CYCLES AT 60 HZ SINE WAVE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
Ta = 100 °C
100
10
1 Ta = 25 °C
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : September 28, 2012





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