BAS216WS DIODE Datasheet

BAS216WS Datasheet, PDF, Equivalent


Part Number

BAS216WS

Description

SILICON EPITAXIAL SWITCHING DIODE

Manufacture

CDIL

Total Page 3 Pages
Datasheet
Download BAS216WS Datasheet


BAS216WS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL SWITCHING DIODE
BAS216WS
SOD-323
PLASTIC PCAKAGE
Marking
BAS216WS=W2 with cathode band
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non Repetitive Peak Forward Surge Current
at t=1s
at t=1ms
at t=1µs
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
VR
IF
IFRM
IFSM
Ptot
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=1mA
IF=10mA
IF=50mA
IF=150mA
Reverse Current
IR VR=25V
VR=75V
VR=25V, Tj=150ºC
VR=75V, Tj=150ºC
VALUE
85
75
250
500
0.5
1.0
4.0
200
150
- 65 to +150
MIN MAX
0.715
0.855
1.0
1.25
30
1.0
30
50
DYNAMIC CHARACTERISTICS
Diode Capacitance
Reverse Recovery Time
BAS216WS Rev010410E
Ctot VR=0V, f=1MHz
1.5
IF=10mA, to IR=10mA
trr RL=100
4.0
Measured at IR=1mA
.
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
UNIT
V
V
V
V
nA
µA
µA
µA
pF
ns
Continental Device India Limited
Data Sheet
Page 1 of 3

BAS216WS
BAS216WS
SOD-323
PLASTIC PCAKAGE
Com pone nt D isposa l I nst r uct ions
1. CDI L Sem iconduct or Devices are RoHS com pliant , cust om ers are request ed t o please
dispose as per prevailing Environm ent al Legislat ion of t heir Count ry.
2. I n Europe, please dispose as per EU Direct ive 2002/ 96/ EC on Wast e Elect rical and
Elect ronic Equipm ent ( WEEE) .
BAS216WS Rev010410E
Continental Device India Limited
Data Sheet
Page 2 of 3


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company SILICON EPITAXIAL SWITCHING DIODE BAS216WS SOD-323 PLASTIC PCAKAG E Marking BAS216WS=W2 with cathode ban d ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) D ESCRIPTION Repetitive Peak Reverse Volt age Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Surge Curr ent at t=1s at t=1ms at t=1µs Power Di ssipation Junction Temperature Storage Temperature Range SYMBOL VRRM VR IF IF RM IFSM Ptot Tj Tstg ELECTRICAL CHARAC TERISTICS (Ta=25ºC unless specified ot herwise) DESCRIPTION SYMBOL TEST CON DITION Forward Voltage VF IF=1mA IF=1 0mA IF=50mA IF=150mA Reverse Current IR VR=25V VR=75V VR=25V, Tj=150ºC VR=75V, Tj=150ºC VALUE 85 75 250 500 0.5 1.0 4.0 200 150 - 65 to +150 MIN MA X 0.715 0.855 1.0 1.25 30 1.0 30 50 DY NAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time BAS216WS Rev0104 10E Ctot VR=0V, f=1MHz 1.5 IF=10mA, to IR=10mA trr RL=100 Ω 4.0.
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