BAS216

SMD Type HIGH-SPEED SWITCHING DIODE BAS216 Diodes Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V Repetitive peak forward current:max. 500 mA. SOD110 Unit: mm cathode idenfifier Absolute Maximum Ratings Ta = 25 Parameter Continuous peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFSM Non-repetitive peak forwrad current IFSM Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj Note 1. Device mounted on an FR4 printed-circuit board. Conditions Note 1 square wave; Tj = 25 prior to surge; t=1 A t = 1 ms t=1s Tamb = 25 ;note 1 Min -65 Max Unit 85 V 75 V 250 mA 500 mA 4 1 0.5 400 +150 150 A mW www.kexin.com.cn 1 SMD Type HIGH-SPEED SWITCHING DIODE BAS216 Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Max Unit IF = 1 mA 715 mV forward voltage IF = 10 mA VF IF = 50 mA 855 mV 1V IF = 150 mA 1.25 V VR = 25 V 30 nA capacitance reverse current IR VR = 75 V VR = 25 V, Tj = 150 1A 30 A VR = 25 V, Tj = 150 50 A diods capacitance Cd VR = 1 V, f = 1 MHz 1.5 pF reverse recovery time when switched from IF = 10 mA to trr IR = 10 mA; RL = 100 measured at IR = 1 mA 4 ns forward recovery voltage Vrr when switched from IF = 10 mA;tr = 20 ns 1.75 V Note 1.Pulsed test: tp = 300 s, ä = 0.02. Marking Marking A6 2 www.kexin.com....