BAS216 DIODE Datasheet

BAS216 Datasheet, PDF, Equivalent


Part Number

BAS216

Description

HIGH-SPEED SWITCHING DIODE

Manufacture

Kexin

Total Page 2 Pages
Datasheet
Download BAS216 Datasheet


BAS216
SMD Type
HIGH-SPEED SWITCHING DIODE
BAS216
Diodes
Features
Small ceramic SMD package
High switching speed:max. 4 ns
Continuous reverse voltage:max.75V
Repetitive peak reverse voltage:max.85V
Repetitive peak forward current:max. 500 mA.
SOD110
Unit: mm
cathode
idenfifier
Absolute Maximum Ratings Ta = 25
Parameter
Continuous peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Symbol
VRRM
VR
IF
IFSM
Non-repetitive peak forwrad current
IFSM
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Tj
Note
1. Device mounted on an FR4 printed-circuit board.
Conditions
Note 1
square wave; Tj = 25 prior to surge;
t=1 A
t = 1 ms
t=1s
Tamb = 25 ;note 1
Min
-65
Max Unit
85 V
75 V
250 mA
500 mA
4
1
0.5
400
+150
150
A
mW
www.kexin.com.cn 1

BAS216
SMD Type
HIGH-SPEED SWITCHING DIODE
BAS216
Diodes
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min Max Unit
IF = 1 mA
715 mV
forward voltage
IF = 10 mA
VF
IF = 50 mA
855 mV
1V
IF = 150 mA
1.25 V
VR = 25 V
30 nA
capacitance reverse current
IR
VR = 75 V
VR = 25 V, Tj = 150
1A
30 A
VR = 25 V, Tj = 150
50 A
diods capacitance
Cd VR = 1 V, f = 1 MHz
1.5 pF
reverse recovery time
when switched from IF = 10 mA to
trr IR = 10 mA; RL = 100
measured at IR = 1 mA
4 ns
forward recovery voltage
Vrr when switched from IF = 10 mA;tr = 20 ns
1.75 V
Note
1.Pulsed test: tp = 300 s, รค = 0.02.
Marking
Marking
A6
2 www.kexin.com.cn


Features SMD Type HIGH-SPEED SWITCHING DIODE BAS2 16 Diodes Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repe titive peak reverse voltage:max.85V Rep etitive peak forward current:max. 500 m A. SOD110 Unit: mm cathode idenfifie r Absolute Maximum Ratings Ta = 25 Pa rameter Continuous peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFSM Non-r epetitive peak forwrad current IFSM T otal power dissipation Ptot Storage t emperature Tstg Junction temperature Tj Note 1. Device mounted on an FR4 printed-circuit board. Conditions Note 1 square wave; Tj = 25 prior to surge; t=1 A t = 1 ms t=1s Tamb = 25 ;note 1 Min -65 Max Unit 85 V 75 V 250 mA 500 mA 4 1 0.5 400 +150 150 A mW www.ke xin.com.cn 1 SMD Type HIGH-SPEED SWITC HING DIODE BAS216 Diodes Electrical C haracteristics Ta = 25 Parameter Symb ol Conditions Min Max Unit IF = 1 mA 715 mV forward voltag.
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