4N38A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Pk (PW = 300 µs, 2% duty cycle) LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C VR IF IF(pk) PD 3 Volts 80 mA 3A 150 mW 1.41 mW/°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C VCEO VECO VCBO IC PD 80 Volts 7 Volts 80 Volts 100 mA 150 mW 1.76 mW/°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 mW 2.94 mW...