4N38A Optoisolators Datasheet

4N38A Datasheet, PDF, Equivalent


Part Number

4N38A

Description

6-Pin DIP Optoisolators

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download 4N38A Datasheet


4N38A
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
6-Pin DIP Optoisolators
Transistor Output
The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
Monitor and Detection Circuits
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current — Continuous
Forward Current — Pk (PW = 300 µs, 2% duty cycle)
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR
IF
IF(pk)
PD
3 Volts
80 mA
3A
150 mW
1.41 mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
VECO
VCBO
IC
PD
80 Volts
7 Volts
80 Volts
100 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(2)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Ambient Operating Temperature Range(3)
Storage Temperature Range(3)
TA – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 sec, 1/16from case)
TL 260 °C
1. 4N38 does not require UL approval; 4N38A does. Otherwise both parts are identical. Both parts
1. built by Motorola have UL approval.
2. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 2
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
Order this document
by 4N38/D
4N38
4N38A*
[CTR = 20% Min]
*Motorola Preferred Device
STYLE 1 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
16
25
34
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1

4N38A
4N38 4N38A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
VF
Reverse Leakage Current (VR = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
IR
CJ
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 60 V, TA = 25°C)
(VCE = 60 V, TA = 100°C)
ICEO
Collector–Base Dark Current (VCB = 60 V)
Collector–Emitter Breakdown Voltage (IC = 1 mA)
Collector–Base Breakdown Voltage (IC = 1 µA)
Emitter–Collector Breakdown Voltage (IE = 100 µA)
DC Current Gain (IC = 2 mA, VCE = 5 V)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
ICBO
V(BR)CEO
V(BR)CBO
V(BR)ECO
hFE
CCE
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
Emitter–Base Capacitance ( f = 1 MHz, VEB = 0)
CCB
CEB
COUPLED
Output Collector Current (IF = 20 mA, VCE = 1 V)
IC (CTR)(2)
Collector–Emitter Saturation Voltage (IC = 4 mA, IF = 20 mA)
Turn–On Time (IC = 2 mA, VCC = 10 V, RL = 100 )(3)
Turn–Off Time (IC = 2 mA, VCC = 10 V, RL = 100 )(3)
Rise Time (IC = 2 mA, VCC = 10 V, RL = 100 )(3)
Fall Time (IC = 2 mA, VCC = 10 V, RL = 100 )(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Min
80
80
7
4 (20)
7500
1011
TYPICAL CHARACTERISTICS
2
PULSE ONLY
1.8 PULSE OR DC
1.6
10
NORMALIZED TO:
IF = 10 mA
1
Typ
1.15
1.3
1.05
18
20
6
2
120
120
7.8
400
8
21
8
7 (35)
5
4
2
3
0.2
Max Unit
1.5 Volts
100 µA
— pF
50 nA
µA
20 nA
— Volts
— Volts
— Volts
——
— pF
— pF
— pF
— mA (%)
1 Volts
µs
µs
µs
µs
— Vac(pk)
— pF
1.4
TA = –55°C
1.2 25°C
1 100°C
1 10
100 1000
IF, LED FORWARD CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
0.1
0.01
0.1 0.2
0.5 1 2
5 10 20
IF, LED INPUT CURRENT (mA)
50 100
Figure 2. Output Current versus Input Current
2 Motorola Optoelectronics Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA G lobalOptoisolator™ 6-Pin DIP Optoisol ators Transistor Output The 4N38 and 4N 38A(1) devices consist of a gallium ars enide infrared emitting diode optically coupled to a monolithic silicon photot ransistor detector. • Guaranteed 80 V olt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum • Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the s uffix ”V” must be included at end o f part number. VDE 0884 is a test optio n. Applications • General Purpose Swi tching Circuits • Interfacing and cou pling systems of different potentials a nd impedances • Monitor and Detection Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT LED Reverse Volta ge Forward Current — Continuous Forwa rd Current — Pk (PW = 300 µs, 2% dut y cycle) LED Power Dissipation @ TA = 2 5°C with Negligible Power in Output Detector Derate above 25°C VR IF IF(pk) PD 3 Volts 80.
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