M29F400FT

M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features Supply voltage – VCC = 5V Access time: 55ns Program/erase controller – Embedded byte/word program algorithms Erase suspend and resume modes Low power consumption – Standby and automatic standby 100,000 PROGRAM/ERASE cycles per block Electronic signature – Manufacturer code: 0x01h Top device codes – M29F200FT: 0x2251 – M29F400FT: 0x2223 – M29F800FT: 0x22D6 – M29F160FT: 0x22D2 Bottom device codes – M29F200FB: 0x2257 – M29F400FB: 0x22AB – M29F800FB: 0x2258 – M29F160FB: 0x22D8 RoHS-compliant packages – TSOP48 – SO44 (16Mb not available for this package) Automotive device grade 3 – Temperature: –40 to +125°C Automotive device grade 6 – Temperature: –40 to +85°C Automotive grade certified (AEC-Q100) CCMTD-1725822587-8401 m29fxxxf/t_2mb-16mb.pdf - Rev. C 5/18 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. M29FxxxFT/B Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica...