M29F160FT Memory Datasheet

M29F160FT Datasheet, PDF, Equivalent


Part Number

M29F160FT

Description

Micron Parallel NOR Flash Embedded Memory

Manufacture

Micron

Total Page 30 Pages
Datasheet
Download M29F160FT Datasheet


M29F160FT
M29FxxxFT/B
Features
Micron Parallel NOR Flash Embedded
Memory
Top/Bottom Boot Block 5V Supply
M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B
Features
• Supply voltage
– VCC = 5V
• Access time: 55ns
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume modes
• Low power consumption
– Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0x01h
• Top device codes
– M29F200FT: 0x2251
– M29F400FT: 0x2223
– M29F800FT: 0x22D6
– M29F160FT: 0x22D2
• Bottom device codes
– M29F200FB: 0x2257
– M29F400FB: 0x22AB
– M29F800FB: 0x2258
– M29F160FB: 0x22D8
• RoHS-compliant packages
– TSOP48
– SO44 (16Mb not available for this package)
• Automotive device grade 3
– Temperature: –40 to +125°C
• Automotive device grade 6
– Temperature: –40 to +85°C
• Automotive grade certified (AEC-Q100)
CCMTD-1725822587-8401
m29fxxxf/t_2mb-16mb.pdf - Rev. C 5/18 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

M29F160FT
M29FxxxFT/B
Features
Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-
ages, or for further information, contact your Micron sales representative. Part numbers can be verified at
www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products.
Contact the factory for devices not found.
Table 1: Part Number Information
Part Number
Category
Device Type
Density
Technology
Configuration
Speed
Package
Temperature Range
Shipping Options
Fab Location
Category Details
M29F = 5V
200 = 2Mb
400 = 4Mb
800 = 8Mb
160 = 16Mb (not available in SO 44 package)
F = 110nm
T = Top boot
B = Bottom boot
55 = 55ns device speed in conjunction with temperature range = 3, which denotes Auto Grade –
40 to 125 °C parts
5A = 55ns access time (Auto Grade) only in conjunction with the Grade 6 option
M = SO 44
N = TSOP 48 12mm x 20mm AL 42
6 = –40°C to +85°C
3 = –40°C to +125°C
blank = standard packing (Tray)
E = RoHS-compliant package, standard packing (tray)
T = Tape and reel packing (24mm)
F = RoHS-compliant package, tape and reel packing (24mm)
2 = Fab 13 (Singapore)
CCMTD-1725822587-8401
m29fxxxf/t_2mb-16mb.pdf - Rev. C 5/18 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.


Features M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/ B, M29F800FT/B, M29F160FT/B Features Supply voltage – VCC = 5V • Acce ss time: 55ns • Program/erase control ler – Embedded byte/word program algo rithms • Erase suspend and resume mod es • Low power consumption – Standb y and automatic standby • 100,000 PRO GRAM/ERASE cycles per block • Electro nic signature – Manufacturer code: 0x 01h • Top device codes – M29F200FT: 0x2251 – M29F400FT: 0x2223 – M29F8 00FT: 0x22D6 – M29F160FT: 0x22D2 • Bottom device codes – M29F200FB: 0x22 57 – M29F400FB: 0x22AB – M29F800FB: 0x2258 – M29F160FB: 0x22D8 • RoHS -compliant packages – TSOP48 – SO44 (16Mb not available for this package) • Automotive device grade 3 – Tempe rature: –40 to +125°C • Automotive device grade 6 – Temperature: –40 to +85°C • Automotive grade certifie d (AEC-Q100) CCMTD-1725822587-8401 m29fxxxf/t_2mb-16mb.pdf - Rev. C 5/18 EN 1 Micron Technology, Inc. reserves the right to c.
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