Thyristor. MCO25-16io1 Datasheet

MCO25-16io1 Thyristor. Datasheet pdf. Equivalent

MCO25-16io1 Datasheet
Recommendation MCO25-16io1 Datasheet
Part MCO25-16io1
Description Thyristor
Feature MCO25-16io1; Thyristor Single Thyristor Part number MCO25-16io1 MCO25-16io1 VRRM = 1600 V I TAV = 32 A VT =.
Manufacture IXYS
Datasheet
Download MCO25-16io1 Datasheet




IXYS MCO25-16io1
Thyristor
Single Thyristor
Part number
MCO25-16io1
MCO25-16io1
VRRM = 1600 V
I TAV
=
32 A
VT = 1,21 V
3 1/4
2
Backside: isolated
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b



IXYS MCO25-16io1
MCO25-16io1
Thyristor
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1600 V
VR/D = 1600 V
forward voltage drop
IT = 25 A
I T = 50 A
IT = 25 A
I T = 50 A
average forward current
TC = 80°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 90 A
tP = 200 µs; diG /dt = 0,2 A/µs;
IG = 0,2 A; V = VDRM
non-repet., IT = 30 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0,2 A; diG/dt = 0,2 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0,2 A; diG/dt = 0,2 A/µs
VR = 100 V; IT = 30 A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 15 V/µs tp = 200 µs
typ. max. Unit
1700 V
1600 V
50 µA
2 mA
1,23 V
1,50 V
1,21 V
1,55 V
32 A
50 A
0,86 V
13,9 m
1,1 K/W
0,30 K/W
110 W
370 A
400 A
315 A
340 A
685 A²s
665 A²s
495 A²s
480 A²s
16 pF
10 W
1W
0,5 W
150 A/µs
500 A/µs
1000 V/µs
1,5 V
1,6 V
55 mA
80 mA
0,2 V
5 mA
150 mA
100 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b



IXYS MCO25-16io1
MCO25-16io1
Package SOT-227B (minibloc)
Ratings
Symbol
I RMS
TVJ
Top
Tstg
Weight
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal 1)
min.
-40
-40
-40
typ. max.
150
150
125
150
30
Unit
A
°C
°C
°C
g
MD
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
1,1
terminal torque
1,1
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
10,5
8,6
3,2
6,8
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL 1 mA
3000
2500
1,5 Nm
1,5 Nm
mm
mm
V
V
1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Part No.
Logo
XXXXX ®
Zyyww
abcd
Assembly Line
DateCode
Assembly Code
Ordering
Standard
Ordering Number
MCO25-16io1
Marking on Product
MCO25-16io1
Delivery Mode
Tube
Quantity Code No.
10 500548
Equivalent Circuits for Simulation
I V0
R0
Thyristor
V 0 max
R0 max
threshold voltage
slope resistance *
0,86
12
* on die level
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b





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