Current Transistor. BTP2014L3 Datasheet

BTP2014L3 Transistor. Datasheet pdf. Equivalent

BTP2014L3 Datasheet
Recommendation BTP2014L3 Datasheet
Part BTP2014L3
Description PNP Epitaxial Planar High Current Transistor
Feature BTP2014L3; CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : 2017.07.07 Pag.
Manufacture CYStech
Datasheet
Download BTP2014L3 Datasheet




CYStech BTP2014L3
CYStech Electronics Corp.
Spec. No. : C624L3
Issued Date : 2013.04.19
Revised Date : 2017.07.07
Page No. : 1/9
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP2014L3
Features
4 Amps continuous current, up to 10 Amps peak current
Very low saturation voltage
Extremely low equivalent on resistance, RCE(SAT)=79mtyp. at 3A
Pb-free lead plating and halogen-free package
Symbol
BTP2014L3
Outline
SOT-223
C
BBase
CCollector
EEmitter
E
C
B
Ordering Information
Device
BTP2014L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTP2014L3
CYStek Product Specification



CYStech BTP2014L3
CYStech Electronics Corp.
Spec. No. : C624L3
Issued Date : 2013.04.19
Revised Date : 2017.07.07
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @TA=25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj ; Tstg
Limits
-180
-140
-7
-4
-10
-1
3 (Note 1)
1.6 (Note 2)
-55 ~ +150
Unit
V
V
V
A
A
A
W
W
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
RθJC 12.5
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
RθJA
41.7 (Note 1)
78 (Note 2)
Note: 1.For a device surface mounted on 52mm×52mm×1.6mm FR 4 PCB of 2oz. copper, in still air condition.
2.For a device surface mounted on 25mm×25mm×1.6mm FR 4 PCB of 1oz. copper, in still air condition.
Unit
°C/W
°C/W
°C/W
Characteristics (Ta=25°C, unless otherwise specified)
Symbol
BVCBO
BVCER
*BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*RCE(sat)
*VBE(sat)
*VBE(on)
hFE1
hFE2
*hFE3
*hFE4
fT
BTP2014L3
Min.
-180
-180
-140
-7
-
-
-
-
-
-
-
-
-
-
100
100
35
-
-
Typ.
-200
-200
-160
-8
-
-
-
-39
-52
-84
-236
79
-965
-853
225
200
-
5
120
Max.
-
-
-
-
-20
-20
-10
-60
-80
-120
-360
120
-1040
-930
-
300
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mΩ
mV
mV
-
-
-
-
MHz
Test Conditions
IC=-100μA
IC=-1μA, RBE1kΩ
IC=-10mA
IE=-100μA
VCB=-150V
VCE=-150V, RBE1kΩ
VEB=-6V
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
VCE=-5V, IC=-3A
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-3A
VCE=-5V, IC=-10A
VCE=-10V, IC=-100mA, f=50MHz
CYStek Product Specification



CYStech BTP2014L3
CYStech Electronics Corp.
Spec. No. : C624L3
Issued Date : 2013.04.19
Revised Date : 2017.07.07
Page No. : 3/9
Cob - 31 - pF VCB=-10V, f=1MHz
ton 42 ns IC=-1A, IB1=-100mA, IB2=100mA,
toff 636 ns VCC=-50V
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended soldering footprint
BTP2014L3
CYStek Product Specification





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