BTP2907AL3 Transistor Datasheet

BTP2907AL3 Datasheet, PDF, Equivalent


Part Number

BTP2907AL3

Description

General Purpose PNP Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 5 Pages
Datasheet
Download BTP2907AL3 Datasheet


BTP2907AL3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP2907AL3
Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date : 2006.07.04
Page No. : 1/5
Description
The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the
SOT-223 package which is designed for medium power surface mount applications.
Low VCE(sat)
High switching speed.
Complementary to BTN2222AL3
Pb-free package
Symbol
BTP2907AL3
Outline
SOT-223
C
BBase
CCollector
EEmitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
-60
-60
-5
-800
1 (Note)
150
-55~+150
V
V
V
mA
W
°C
°C
Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper area
equal to 36mm×18mm. The mounting pad for the collector lead is 6 cm² minimum.
BTP2907AL3
CYStek Product Specification

BTP2907AL3
CYStech Electronics Corp.
Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date : 2006.07.04
Page No. : 2/5
Electrical Characteristics (Ta=25°C)
Symbol
Min. Typ. Max.
BVCBO
-60
-
-
*BVCEO
-60
-
-
BVEBO
-5
-
-
ICBO - - -10
ICEX - - -50
*VCE(sat)
-
-0.2 -0.4
*VCE(sat)
-
-0.5 -1.6
*VBE(sat)
-
- -1.3
*VBE(sat)
-
- -2.6
*hFE
75
-
-
*hFE 100 -
-
*hFE 100 -
-
*hFE
100
-
300
*hFE
50
-
-
fT 200
-
Cob - - 8
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10µA
IC=-10mA
IE=-10µA
VCB=-50V
VCE=-30V, VBE(OFF)=0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100µA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
BTP2907AL3
Package
SOT-223
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
2907A
BTP2907AL3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTP29 07AL3 Spec. No. : C317L3-H Issued Date : 2003.04.15 Revised Date : 2006.07.04 Page No. : 1/5 Description • The BT P2907AL3 is designed for general purpos e amplifier applications. It is housed in the SOT-223 package which is designe d for medium power surface mount applic ations. • Low VCE(sat) • High switc hing speed. • Complementary to BTN222 2AL3 • Pb-free package Symbol BTP290 7AL3 Outline SOT-223 C B:Base C:C ollector E:Emitter E C B Absolute M aximum Ratings (Ta=25°C) Parameter S ymbol Limits Unit Collector-Base Vol tage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Power Di ssipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Ts tg -60 -60 -5 -800 1 (Note) 150 -55~+1 50 V V V mA W °C °C Note: The power which can be dissipated assuming the d evice is mounted in a typical manner on a P.C.B. with copper area equal to 36mm×18mm. The mounting pad for the collector .
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