SF80N80 MOSFET Datasheet

SF80N80 Datasheet, PDF, Equivalent


Part Number

SF80N80

Description

POWER MOSFET

Manufacture

STMC

Total Page 6 Pages
Datasheet
Download SF80N80 Datasheet


SF80N80
POWER MOSFET
Features
80V,80A N-Channel MOSFET
RDS(on)(typ.)=6.5mΩ@VGS=10V
High ruggedness
Fast switching
100% avalanche tested
Exceptional dv/dt capability
适用于 60V 电动车控制器
SF80N80
Applications
Switching application
Motor drive
SF80N80P
SF80N80F
SF80N80I
SF80N80D
Absolute Maximum Ratings
Symbol
VDSS
VGS
ID
IDM
EAS
PD
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25)
Continuous Drain Current(TC=100)
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
Maximum Power Dissipation ( TC=25 )
Maximum Power Dissipation ( TC=100)
Operating Junction Temperature Range
Storage Temperature Range
Value
80
±25
80
65
320
256
150
75
-55 to +185
-55 to +185
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25,L=1.0mH,RG=25Ω,ID=37A,VGS=10V
青岛矽科微电子有限公司
WWW.SITECH.CC
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Units
V
V
A
A
A
mJ
W
W
1/6

SF80N80
Thermal data
Symbol
Rth J-C
Parameter
Thermal Resistance, Junction to case
SF80N80
Max.
1
Units
/ W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSSS
IGSS
VGS(th)
RDS(on)
gfs
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
RGint
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Integrated gate resistor
VGS=0V, ID=250uA
VDS=80V, VGS=0V
VGS=25V, VDS=0V
VGS= -25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDS=15V, ID=30A
VDD=30V
VGS=10V
ID=40A
VDD=30V
VGS=10V
ID=40A
RG=7
VDS=30V
VGS=0V
f = 1MHz
Min.
80
2
-
-
-
-
-
-
-
Typ.
3
6.5
28
64
13
22
14
16
31
54
3400
450
170
1.4
Max.
1
100
-100
4
7.5
120
-
-
-
-
-
-
-
Units
V
uA
nA
nA
V
mΩ
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Ratings and Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
VSD Forward On Voltage
IS Continuous Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
Test Conditions
VGS=0V,IS=40A
VDD=25V,IS=40A
dIF/dt=100A/us
Min. Typ.
- 0.82
- 48
- 105
Max.
1.3
80
Units
V
A
ns
nC
青岛矽科微电子有限公司
WWW.SITECH.CC
st_market@163.com
2/6


Features POWER MOSFET Features  80V,80A N-Chan nel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS =10V  High ruggedness  Fast switc hing  100% avalanche tested  Exce ptional dv/dt capability 60V SF80N8 0 Applications  Switching applicati on  Motor drive SF80N80P SF80N80F SF80N80I SF80N80D Absolute Maximum Rat ings Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent(TC=25℃) Continuous Drain Current( TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2 ) Maximum Power Dissipation ( TC=25 ℃ ) Maximum Power Dissipation ( TC=100℃ ) Operating Junction Temperature Range Storage Temperature Range Value 80 ±2 5 80 65 320 256 150 75 -55 to +185 -55 to +185 Notes: 1. Repetitive Rating: P ulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH ,RG=25Ω,ID=37A,VGS=10V WWW.SITECH.C C st_market@163.com Units V V A A A m J W W ℃ ℃ 1/6 Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction to case .
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