SF80N80

POWER MOSFET Features  80V,80A N-Channel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptional dv/dt capability 60V SF80N80 Applications  Switching application  Motor drive SF80N80P SF80N80F SF80N80I SF80N80D Absolute Maximum Ratings Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range Value 80 ±25 80 65 320 256 150 75 -55 to +185 -55 to +185 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH,RG=25Ω,ID=37A,VGS=10V WWW.SITECH.CC st_market@163.com Units V V A A A mJ W W ℃ ℃ 1/6 Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction to case SF80N80 Max. 1 Units ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSSS IGSS VGS(th) RDS(on) gfs Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss RGint Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse Gate Threshold Voltage Collector-Emitter Saturation Voltage Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Tu...