SF50N06 MOSFET Datasheet

SF50N06 Datasheet, PDF, Equivalent


Part Number

SF50N06

Description

POWER MOSFET

Manufacture

STMC

Total Page 6 Pages
Datasheet
Download SF50N06 Datasheet


SF50N06
POWER MOSFET
Features
60V,50A N-Channel MOSFET
RDS(on)(typ.)=6mΩ@VGS=10V
High ruggedness
Fast switching
100% avalanche tested
Exceptional dv/dt capability
Applications
Switching application
Motor drive
SF50N06P
SF50N06F
SF50N06
SF50N06I
SF50N706D
Absolute Maximum Ratings
Symbol
Parameter
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25 )
Continuous Drain Current(TC=100)
IDM
EAS
PD
TJ
TSTG
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
Maximum Power Dissipation ( TC=25 )
Maximum Power Dissipation ( TC=100)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25,L=1.0mH,RG=50Ω,ID=37A,VGS=10V
Value
60
±25
50
40
200
100
70
34
-55 to +175
-55 to +175
Units
V
V
A
A
A
mJ
W
W
WWW.SITECH.COM
Total 6 Pages 1
st_market@163.com

SF50N06
Thermal data
Symbol
Rth J-C
Parameter
Thermal Resistance, Junction to case
SF50N06
Max.
2.1
Units
/W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSSS
IGSS
VGS(th)
RDS(on)
gfs
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
RGint
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=0V, ID=250uA
VDS=60V, VGS=0V
VGS=25V, VDS=0V
VGS= -25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=25A
VDS=15V, ID=30A
VDD=30V
VGS=10V
ID=25A
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=30V
VGS=10V
ID=25A
RG=4.7
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=30V
VGS=0V
f = 1MHz
Integrated gate resistor
Min.
60
2
-
-
-
-
-
-
-
Typ.
3
6
18
40
10
9
10
86
34
26
1650
380
165
1.6
Max. Units
1
100
-100
4
10
-
-
-
-
-
-
-
V
uA
nA
nA
V
mΩ
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Ratings and Characteristics (TC=25
unless othe
Symbol
Parameter
VSD Forward On Voltage
IS Continuous Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
Test Conditions
VGS=0V,IS=20A
VDD=25V,IS=25A
dIF/dt=100A/us
Min.
-
-
-
Typ.
32
40
Max. Units
1.2 V
50 A
ns
nC
WWW.SITECH.COM
Total 6 Pages 2
st_market@163.com


Features POWER MOSFET Features  60V,50A N-Chan nel MOSFET  RDS(on)(typ.)=6mΩ@VGS=1 0V  High ruggedness  Fast switchi ng  100% avalanche tested  Except ional dv/dt capability Applications Switching application  Motor drive SF50N06P SF50N06F SF50N06 SF50N06I S F50N706D Absolute Maximum Ratings Sym bol Parameter VDSS VGS ID Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current(TC=25 ℃) Continuous Drain Current(TC=100℃) IDM EAS PD TJ TSTG Pulsed Drain Current(Note 1 ) Si ngle Pulsed Avalanche Energy(Note 2) Ma ximum Power Dissipation ( TC=25 ℃) Ma ximum Power Dissipation ( TC=100℃) Op erating Junction Temperature Range Stor age Temperature Range Notes: 1. Repeti tive Rating: Pulse width limited by max imum junction temperature 2.Starting TJ =25℃,L=1.0mH,RG=50Ω,ID=37A,VGS=10V Value 60 ±25 50 40 200 100 70 34 -55 t o +175 -55 to +175 Units V V A A A mJ W W ℃ ℃ WWW.SITECH.COM Total 6 Pa ges 1 st_market@163.com Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction t.
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