SF24N50A MOSFET Datasheet

SF24N50A Datasheet, PDF, Equivalent


Part Number

SF24N50A

Description

POWER MOSFET

Manufacture

STMC

Total Page 4 Pages
Datasheet
Download SF24N50A Datasheet


SF24N50A
POWER MOSFET
Features
500V,24A N-Channel MOSFET
RDS(on)(typ.)=0.18Ω@VGS=10V
High ruggedness
Fast switching
100% avalanche tested
Exceptional dv/dt capability
Applications
Electric Welding
Computer Power
LCD Power
Switching application
Motor drive
SF24N50A
Absolute Maximum Ratings
Symbol
VDSS
VGS
ID
IDM
EAS
PD
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25)
Continuous Drain Current(TC=100)
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
Maximum Power Dissipation ( TC=25 )
Maximum Junction Temperature
Storage Temperature Range
Value
500
±30
24
19
96
1100
290
150
-55 to +150
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25,L=3.4mH,RG=25Ω,ID=24A,VGS=10V
Units
V
V
A
A
A
mJ
W
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SF24N50A
Thermal data
Symbol
Rth J-C
Rth J-A
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to air
SF24N50A
Max.
0.43
40
Units
/ W
/ W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Drain-Source Leakage Current
VDS=500V, VGS=0V
Gate Leakage Current, Forward
VGS=25V, VDS=0V
Gate Leakage Current, Reverse
VGS= -25V, VDS=0V
Gate Threshold Voltage
VGS=VDS, ID=250uA
Collector-Emitter Saturation Voltage VGS=10V, ID=12A
Forward Transconductance
VDS=10V, ID=10A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=400V
VGS=10V
ID=24A
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=250V,RL=20Ω
VGEN=10V
ID=24A
RG=25Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f = 1MHz
Min.
500
2
4.0
-
-
-
-
-
-
-
Typ.
3
0.15
14
90
23
52
80
250
200
155
3500
520
55
Max.
50
100
-100
4
0.18
120
170-
500
400
320
4500
670
70
Units
V
uA
nA
nA
V
mΩ
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Ratings and Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
VSD Forward On Voltage
IS Continuous Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
Test Conditions
VGS=0V,ISD=20A
ISD=60A
dIF/dt=100A/us
Min.
-
Typ.
-
- 250
- 1.1
Max. Units
1.4 V
24 A
ns
uC
青岛矽科微电子有限公司
WWW.SITECH.CC
st_market@163.com
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Features POWER MOSFET Features  500V,24A N-Cha nnel MOSFET  RDS(on)(typ.)=0.18Ω@VG S=10V  High ruggedness  Fast swit ching  100% avalanche tested  Exc eptional dv/dt capability Applications  Electric Welding  Computer Power  LCD Power  Switching applicatio n  Motor drive SF24N50A Absolute M aximum Ratings Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drai n Current(TC=100℃) Pulsed Drain Curre nt(Note 1 ) Single Pulsed Avalanche Ene rgy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Junction Temperatur e Storage Temperature Range Value 500 ±30 24 19 96 1100 290 150 -55 to +150 Notes: 1. Repetitive Rating: Pulse wid th limited by maximum junction temperat ure 2.Starting TJ=25℃,L=3.4mH,RG=25Ω ,ID=24A,VGS=10V Units V V A A A mJ W ℃ WWW.SITECH.CC st_market@163. com 1/4 Thermal data Symbol Rth J-C Rth J-A Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to air SF24N50.
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