SF24N50A

POWER MOSFET Features  500V,24A N-Channel MOSFET  RDS(on)(typ.)=0.18Ω@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptional dv/dt capability Applications  Electric Welding  Computer Power  LCD Power  Switching application  Motor drive SF24N50A Absolute Maximum Ratings Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Junction Temperature Storage Temperature Range Value 500 ±30 24 19 96 1100 290 150 -55 to +150 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=3.4mH,RG=25Ω,ID=24A,VGS=10V Units V V A A A mJ W ℃ ℃ WWW.SITECH.CC st_market@163.com 1/4 Thermal data Symbol Rth J-C Rth J-A Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to air SF24N50A Max. 0.43 40 Units ℃/ W ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) gfs Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Drain-Source Leakage Current VDS=500V, VGS=0V Gate Leakage Current, Forward VGS=25V, VDS=0V Gate Leakage Current, Reverse VGS= -25V, VDS=0V Gate Threshold Voltage VGS=VDS, ID=250uA Collector-Emitter Saturation Voltage VGS=10V, ...