EPITAXIAL DIODE. SD8040AD Datasheet

SD8040AD DIODE. Datasheet pdf. Equivalent

SD8040AD Datasheet
Recommendation SD8040AD Datasheet
Part SD8040AD
Description FAST RECOVER EPITAXIAL DIODE
Feature SD8040AD; SD8040AD(TO3P) 400V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE (FRED) Features  Planar epi.
Manufacture STMC
Datasheet
Download SD8040AD Datasheet




STMC SD8040AD
SD8040ADTO3P
400V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE FRED
Features
Planar epitaxial chips
Using high temperature Pt diffusion process
Very short recovery time
Extremely low switching losses
Low IRM values
Soft recovery behaviour
100% tested
Applications
Diode for high frequency switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
VRRM = 400 V
IFAVM = 80 A
VFtyp=1.1VIF=40A,TVJ=25℃)
trr <50 nsIF = 1 A; di/dt = 200 A/s
Package
TO3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM
IF(AV)
IFRM
IFSM
TJ
Peak Repetitive Reverse Voltage
Diode Continuous Forward Current ( TC=100 )
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase
60Hz)
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Value
400
80
160
400
-55 to +150
-55 to +150
Units
V
A
A
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode)
Symbol
VR
VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA
Diode Forward Voltage
Diode Forward Voltage
IF=40A TC=25
IF=40A TC=125
Maximum Reverse Leakage Current
VR=400V TC=25
VR=400V TC=125
400
Typ. Max. Units
1.1 1.3
0.95 1.2
100
10
V
V
µA
mA
No. 1 Total 2
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STMC SD8040AD
SD8040ADTO3P
400V FRED DISCRETE DEVICE
DYNAMIC RECOVERY CHARACTERISTICS(TJ = 25 °C unless otherwise specified)
Symbol
IRRM
Qrr
trr
S
IRRM
Qrr
trr
S
Parameter
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Test Conditions
VDD=100V;IF=1A;
dif/dt=200A/µS;
See Fig.4
VDD=350V;IF=40A;
dif/dt=500A/µS;
See Fig.4
Min.
Typ.
3.7
75
40
0.8
20
900
75
0.8
Max.
50
100
Units
A
nc
ns
A
nc
ns
Fig.1 Forward Current vs Forward Voltage
Fig.2 Reverse Current vs Reverse Voltage
Fig.3 trr Test Circuit
Fig.4 trr Waveforms and Definitions
No. 2 Total 2
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