SD3060AD DIODE Datasheet

SD3060AD Datasheet, PDF, Equivalent


Part Number

SD3060AD

Description

FAST RECOVER EPITAXIAL DIODE

Manufacture

STMC

Total Page 2 Pages
Datasheet
Download SD3060AD Datasheet


SD3060AD
SD3060ADTO3P
600V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE FRED
Features
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM values
Soft recovery behaviour
100% avalanche tested
Applications
Antiparallel diode for high frequency switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Power factor control (PFC)
VRRM = 600 V
IFAVM = 30 A
VFtyp=1.45VIF=15A,TVJ=25℃)
trr <40 nsIF = 1 A; di/dt = 200 A/s
Package
TO3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM
IF(AV)
IFRM
IFSM
TJ
TSTG
Peak Repetitive Reverse Voltage
Diode Continuous Forward Current ( TC=100 )
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase
60Hz)
Operating Junction Temperature Range
Storage Temperature Range
Value
600
30
60
120
-55 to +150
-55 to +150
Units
V
A
A
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode)
Symbol
VR
VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA
Diode Forward Voltage
IF=15A TC=25
Diode Forward Voltage
IF=15A TC=125
Maximum Reverse Leakage Current
VR=600V TC=25
VR=600V TC=125
600
Typ. Max. Units
1.45 1.65
1.30 1.50
10
200
V
V
µA
µA
Qingdao Si-Tech microelectronics Co., Ltd. (STMC) PAGE 1 TOTAL 2 www.sitech.cc st_market@163.com

SD3060AD
SD3060ADTO3P
600V FRED DISCRETE DEVICE
DYNAMIC RECOVERY CHARACTERISTICS
(TJ = 25 °C unless otherwise specified for Per Diode)
Symbol
Parameter
Test Conditions
IRRM
Qrr
trr
S
IRRM
Qrr
trr
S
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
VDD=100V;IF=1A;
dif/dt=200A/µS;
See Fig.4
VDD=300V;IF=15A;
dif/dt=500A/µS;
See Fig.4
Min.
Typ.
3.3
48
32
0.7
9.2
265
50
1.35
Max.
Units
A
nc
40 ns
A
nc
ns
Fig.1 Forward Current vs Forward Voltage(Per Diode)
Fig.2 Reverse Current vs Reverse Voltage
ig.3 trr Test Circuit
Fig.4 trr Waveforms and Definitions
Qingdao Si-Tech microelectronics Co., Ltd. (STMC) PAGE 2 TOTAL 2 www.sitech.cc st_market@163.com


Features SD3060AD(TO3P) 600V FRED DISCRETE DE VICE FAST RECOVER EPITAXIAL DIODE (F RED) Features  Planar passivated chips  Very short recovery time  Extremely low switching losses  Low IRM values  Soft recovery behaviour  100% avalanche tested Applications  Antiparallel diode for high frequen cy switching devices  Anti saturatio n diode  Snubber diode  Free whee ling diode in converters and motor cont rol circuits  Rectifiers in switch m ode power supplies (SMPS)  Inductive heating and melting  Uninterruptibl e power supplies (UPS)  Ultrasonic c leaners and welders  Power factor co ntrol (PFC) VRRM = 600 V IFAVM = 30 A VF(typ)=1.45V(IF=15A,TVJ=25℃ trr <40 ns(IF = 1 A; di/dt = 200 A/s) Package TO3P Absolute Maximum Ratings Symbol Parameter VRRM IF(AV ) IFRM IFSM TJ TSTG Peak Repetitive Re verse Voltage Diode Continuous Forward Current ( TC=100 ℃) Repetitive Peak S urge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Jun.
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