FAST RECOVER EPITAXIAL DIODE
SD3060AD(TO3P)
600V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE (FRED)
Features
Planar passivated chips Very...
Description
SD3060AD(TO3P)
600V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE (FRED)
Features
Planar passivated chips Very short recovery time Extremely low switching losses Low IRM values Soft recovery behaviour 100% avalanche tested
Applications
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Power factor control (PFC)
VRRM = 600 V
IFAVM = 30 A
VF(typ)=1.45V(IF=15A,TVJ=25℃)
trr <40 ns(IF = 1 A; di/dt = 200 A/s)
Package
TO3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM IF(AV) IFRM IFSM
TJ TSTG
Peak Repetitive Reverse Voltage Diode Continuous Forward Current ( TC=100 ℃)
Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range
Storage Temperature Range
Value 600 30 60
120 -55 to +150 -55 to +150
Units V A A
A ℃ ℃
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode)
Symbol VR VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA
Diode Forward Voltage
IF=15A TC=25℃
Diode Forward Voltage
IF=15A TC=125℃
Maximum Reverse Leakage Current
VR=600V TC=25℃ VR=600V TC=125℃
600
Typ. Max. Units
1.45 1.65 1.30 1.50
10 200
V V µA µA
Qin...
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