SD75120H DIODE Datasheet

SD75120H Datasheet, PDF, Equivalent


Part Number

SD75120H

Description

FAST RECOVER EPITAXIAL DIODE

Manufacture

STMC

Total Page 2 Pages
Datasheet
Download SD75120H Datasheet


SD75120H
SD75120HTO247-2L
1200V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE FRED
Features
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM values
Soft recovery behaviour
100% avalanche tested
Applications
Antiparallel diode for high frequency switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
VRRM = 1200 V
IFAVM = 75 A
VFtyp=2.0VIF=75A,TVJ=25℃)
trr < 90 nsIF = 1 A; di/dt = 200 A/s
Package
TO247-2L
Absolute Maximum Ratings
Symbol
Parameter
VRRM
IF(AV)
IFRM
IFSM
TJ
TSTG
Peak Repetitive Reverse Voltage
Diode Continuous Forward Current ( TC=100 )
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Operating Junction Temperature Range
Storage Temperature Range
Value
1200
75
150
750
-55 to +150
-55 to +150
Units
V
A
A
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
Symbol
VR
VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA
1200
Diode Forward Voltage
Diode Forward Voltage
IF=75A TC=25
IF=75A TC=125
Maximum Reverse Leakage Current
VR=1200V TC=25
VR=1200V TC=125
Typ. Max. Units
2.0 2.7
1.8 2.5
10
100
V
V
µA
µA
No. 1 Total 2
www.sitech.cc
st_market@163.com

SD75120H
SD75120HTO247-2L
1200V FRED DISCRETE DEVICE
DYNAMIC RECOVERY CHARACTERISTICS(TJ = 25 °C unless otherwise specified)
Symbol
IRRM
Qrr
trr
S
IRRM
Qrr
trr
S
Parameter
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Test Conditions
VDD=100V;IF=1A;
dif/dt=200A/µS;
See Fig.4
VDD=800V;IF=30A;
dif/dt=850A/µS;
See Fig.4
Min.
Typ.
5.1
250
75
0.6
27
910
112
1.26
Max.
90
Units
A
nc
ns
A
nc
ns
Fig.1 Forward Current vs Forward Voltage
Fig.2 Reverse Current vs Reverse Voltage
Fig.3 trr Test Circuit
Fig.4 trr Waveforms and Definitions
No. 2 Total 2
www.sitech.cc
st_market@163.com


Features SD75120H(TO247-2L) 1200V FRED DISCRE TE DEVICE FAST RECOVER EPITAXIAL DIODE (FRED) Features  Planar passiv ated chips  Very short recovery time  Extremely low switching losses  Low IRM values  Soft recovery behav iour  100% avalanche tested Applicat ions  Antiparallel diode for high fr equency switching devices  Anti satu ration diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in swi tch mode power supplies (SMPS)  Indu ctive heating and melting  Uninterru ptible power supplies (UPS)  Ultraso nic cleaners and welders VRRM = 1200 V IFAVM = 75 A VF(typ)=2.0V(IF=7 5A,TVJ=25℃) trr < 90 ns(IF = 1 A ; di/dt = 200 A/s) Package TO247-2L Absolute Maximum Ratings Symbol Par ameter VRRM IF(AV) IFRM IFSM TJ TSTG Peak Repetitive Reverse Voltage Diode C ontinuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz S quare Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range Storage T.
Keywords SD75120H, datasheet, pdf, STMC, FAST, RECOVER, EPITAXIAL, DIODE, D75120H, 75120H, 5120H, SD75120, SD7512, SD751, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)