S40N08M MOSFET Datasheet

S40N08M Datasheet, PDF, Equivalent


Part Number

S40N08M

Description

N-CHANNEL POWER MOSFET

Manufacture

SI-TECH

Total Page 7 Pages
Datasheet
Download S40N08M Datasheet


S40N08M
SI-TECH SEMICONDUCTOR CO.,LTD
S40N08M
N-Channel MOSFET
Features
40V,80A,Rds(on)(typ)=5m@Vgs=10V
Rds(on)(typ)=6m@Vgs=4.5V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25 )
Derating Factor above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Value
40
80
64
320
±20
182
109
0.73
-55 to +175
-55 to +175
Max.
1.37
72
Units
V
A
A
A
V
mJ
W
W/
Units
/W
/W
Ver.1.6
-1-
May.2019

S40N08M
SI-TECH SEMICONDUCTOR CO.,LTD
S40N08M
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VDS=38V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=40A
VDD=40V
VGS=10V
ID=60A
(Note 3)
VDD=37.5V,VGS=10V
ID=45A,RG=4.7
TC=25
(Note 3)
VDS=25V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
40 - - V
- - 1 uA
- - 100 nA
- - -100 nA
1.5 - 2.5 V
- 56
m
6 7.2
- 109 - nC
- 16 - nC
- 19 - nC
- 22 - ns
- 31 - ns
- 74 - ns
- 42 - ns
- 2768 -
pF
- 513 - pF
- 168 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=45A
tr r Reverse Recovery Time
Qr r Reverse Recovery Charge
VGS=0V, IS=45A
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, VDD=36V, RG=25 Ω, Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 80 A
- - 320 A
- - 1.3 V
- 41
ns
- 72
nC
Ver.1.6
-2-
May.2019


Features SI-TECH SEMICONDUCTOR CO.,LTD S40N08M N -Channel MOSFET Features █40V,80A,Rd s(on)(typ)=5mΩ @Vgs=10V Rds(on)(typ)= 6mΩ @Vgs=4.5V █ High Ruggedness █ Fast Switching █ 100% Avalanche Test ed █ Improved dv/dt Capability Genera l Description This Power MOSFET is prod uced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimiz e on-state resistance, have a high rugg ed avalanche characteristics.These devi ces are well suited for low voltage app lication such as automotive,DC/DC conve rters,and high efficiency switch for po wer management in portable and battery products. Absolute Maximum Ratings Sym bol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuou s Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Si ngle Pulsed Avalanche Energy (Note 2) M aximum Power Dissipation (TC=25 ℃) De rating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Rang.
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