POWER MOSFET. SF80N150P Datasheet

SF80N150P MOSFET. Datasheet pdf. Equivalent

SF80N150P Datasheet
Recommendation SF80N150P Datasheet
Part SF80N150P
Description POWER MOSFET
Feature SF80N150P; POWER MOSFET Features  150V,80A N-Channel MOSFET  RDS(on)(typ.)=17mΩ@VGS=10V  High ruggedness  F.
Manufacture STMC
Datasheet
Download SF80N150P Datasheet




STMC SF80N150P
POWER MOSFET
Features
150V,80A N-Channel MOSFET
RDS(on)(typ.)=17mΩ@VGS=10V
High ruggedness
Fast switching
100% avalanche tested
Exceptional dv/dt capability
Applications
Switching application
Motor drive
SF80N150P
Absolute Maximum Ratings
Symbol
VDSS
VGS
ID
IDM
EAS
PD
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25)
Continuous Drain Current(TC=100)
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
Maximum Power Dissipation ( TC=25 )
Maximum Power Dissipation ( TC=100)
Maximum Junction Temperature
Storage Temperature Range
Value
150
±25
80
70
300
400
176
90
175
-55 to +175
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25,L=1.0mH,RG=25Ω,ID=37A,VGS=10V
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Units
V
V
A
A
A
mJ
W
W
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STMC SF80N150P
Thermal data
Symbol
Rth J-C
Parameter
Thermal Resistance, Junction to case
SF80N150P
Max.
0.45
Units
/ W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VDS=100V, VGS=0V
VGS=25V, VDS=0V
VGS= -25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDS=15V, ID=40A
VDS=30V
VGS=10V
ID=40A
VDD=35V,RL=35
VGEN=10V
ID=1A
RG=6
VDS=30V
VGS=0V
f = 1MHz
RGint
Integrated gate resistor
Min.
150
2
-
-
-
-
-
-
-
Typ.
3
17
25
170
55
60
26
46
129
88
6900
1100
519
1.05
Max.
1
100
-100
4
20
240
-
-
-
-
-
-
-
Units
V
uA
nA
nA
V
mΩ
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Ratings and Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
VSD Forward On Voltage
IS Continuous Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
Test Conditions
VGS=0V,ISD=60A
ISD=60A
dIF/dt=100A/us
Min.
-
-
-
Typ.
0.8
68
130
Max.
1.3
130
Units
V
A
ns
nC
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STMC SF80N150P
SF80N150P
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