3419 FET Datasheet

3419 Datasheet, PDF, Equivalent


Part Number

3419

Description

P-Channel Enhancement Mode MOS FET

Manufacture

CHENGXINWEI

Total Page 8 Pages
Datasheet
Download 3419 Datasheet


3419
深圳市诚芯微科技有限公司
SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD.
3419
P-Channel Enhancement Mode MOSFET
www.cxwic.com
1页共8

3419
3419
P-Channel Enhancement Mode MOSFET
DATA SHEET
3419
P-Channel Enhancement Mode MOSFET
www.cxwic.com
2页共8


Features SHENZHEN CHENGXINWEI TECHNOLOGY CO., LT D. 3419 P-Channel Enhancement Mode MOSF ET www.cxwic.com 18 3419 P-Chan nel Enhancement Mode MOSFET DATA SHEET 3419 P-Channel Enhancement Mode MOSFET www.cxwic.com 28 SHENZHEN CHENGXIN WEI TECHNOLOGY CO., LTD.   The   use s  advanced  trench  technology  to   provide  excellent  RDS(ON)  and low  gate  charge.  This  device is  suitable  for  use  as  a  load  switch  or  in    PWM  appl ications.  P-Channel Enhancement Mode MOSFET     GENERAL FEATURES   RDS(ON) <  Ω @     RDS(ON)  <  Ω @     High Power and current handing capability   Le ad free product is acquired   Surface Mount Package    Applicat ion   PWM applications   Load  switch   Power management  DFN 3 X3     ABSOLUTE MAXIMUM RATINGS( TA=25℃unless otherwise noted)  Sy mbol Parameter Common Ratings (TC=25 C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ    TSTG     IS     IDM ID    Drain-Source Breakdown Voltage Maximum Junction Temperat.
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