P-Channel MOSFET
SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD.
3419
P-Channel Enhancement Mode MOSFET
www.cxwic.com
18
3419
P-Channe...
Description
SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD.
3419
P-Channel Enhancement Mode MOSFET
www.cxwic.com
18
3419
P-Channel Enhancement Mode MOSFET
DATA SHEET
3419
P-Channel Enhancement Mode MOSFET
www.cxwic.com
28
SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD.
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
P-Channel Enhancement Mode MOSFET
GENERAL FEATURES
RDS(ON) < Ω @
RDS(ON) < Ω @
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications Load switch Power management
DFN3 X3
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
TSTG
IS
IDM
ID
Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Pulse Drain Current Tested① Continuous Drain Current(VGS=-10V) ①
TC =25°C TC =25°C TC =25°C
Rating
±20 -30 175 -50 to 150 -30 -100 -20
Unit
V V °C °C A A A
www.cxwic.com
38
SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD.
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Off Characteristics Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Body Leakage C...
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