P-Channel MOSFET. 3401 Datasheet

3401 MOSFET. Datasheet pdf. Equivalent

3401 Datasheet
Recommendation 3401 Datasheet
Part 3401
Description P-Channel MOSFET
Feature 3401;  P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide.
Manufacture CXW
Datasheet
Download 3401 Datasheet





CXW 3401
 P-channel Enhancement Mode MOSFET
 
 
 
 
  The   uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in    PWM 
applications. 
GENERAL FEATURES 
RDS(ON) <  Ω @ 
  
RDS(ON) <  Ω @ 
 
High Power and current handing capability 
Lead free product is acquired 
Surface Mount Package 
Application 
PWM applications 
Load switch 
Power management 
 
 
3401 DATASHEET
3424
 
 
 
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted) 
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
  
TSTG
    IS
    IDM
ID
  
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
Continuous Drain Current(VGS=-10V)
  
TC =25°C
TC =25°C
TC =25°C
Rating
±12
-30
175
-50 to 150
-4.2
-16
-4.2
Unit
V
V
°C
°C
A
A
A
                            
1 
                         



CXW 3401
 P-channel Enhancement Mode MOSFET
 
 
 
 
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) 
3401
DATASHEET
3424
Parameter 
OFF CHARACTERISTICS 
DrainSource Breakdown Voltage 
Zero Gate Voltage Drain Current 
GateBody Leakage Current 
ON CHARACTERISTICS (Note 3) 
Gate Threshold Voltage 
DrainSource OnState Resistance 
DYNAMIC CHARACTERISTICS (Note4) 
Input Capacitance 
Output Capacitance 
Reverse Transfer Capacitance 
SWITCHING CHARACTERISTICS (Note 4) 
Turnon Delay Time 
Turnon Rise Time 
TurnOff Delay Time 
TurnOff Fall Time 
Total Gate Charge 
GateSource Charge 
GateDrain Charge 
Dio  de Forward Voltage (Note 3) 
Symbol  Condition 
Min  Typ  Max  Unit 
BVDSS 
IDSS 
IGSS 
VGS=0V 
 
 
VGS=±12V,VDS=0V 
  
  
  
 
1 
±100 
V 
μA 
nA 
VGS(th) 
RDS(ON) 
VDS=VGS,
 
VGS=-10V ID=-4 A
VGS=-4.5V ID=- 2A
Ciss 
Coss 
Crss 
      V 
  mΩ 
  mΩ 
  PF 
PF 
PF 
td(on) 
tr 
td(off) 
tf 
Qg 
Qgs 
Qgd 
VSD 
VDD=-15V,
ID=-1A,
RGEN=6
VGEN=-10V, RL=15
,
VDS=-15V, ID=-5.5A, V  GS=-10V
VDS=-15V, ID=-5.5A, VGS=-4.5V
VDS=-15V, ID=-5.5A, VGS=-10V
VGS=0V,IS  
 
 
 
 
 
 
 
 
    nS 
    nS 
    nS 
    nS 
nC
nC 
nC 
    V 
NOTES:
-a. Surface Mounted on FR4 Board, t <10 sec.
- -b. Pulse Test Pulse Width < 300 s, Duty Cycle < 2%.
c. Guaranteed by design, not subject to production testing.
2 



CXW 3401
 P-channel Enhancement Mode MOSFET
 
 
 
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
25
-VGS = 10.5V~4.5V
20
15
10
5 -VGS = 3.5V
-VGS = 0V~2.5V
0
01
23
45
6
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3401 DATASHEET
3424
25
o
Tj = 125 C
20
15
o
25 C
10
5
o
-55 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
-VGS, Gate-to-Source Voltage (V)
Figure 2. Thansfer Characteristics
750
600 Ciss
450
300
Coss
150
0 Crss
0 5 10 15 20 25 30
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2 VDS = VGS
ID = -250 A
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125
Tj, Junction Temperature ( oC)
Figure 5. Gate Threshold Variation
with Temperature
1.8
VGS = -10V
ID = -5.5A
1.6
1.4
1.2
1.0
0.8
0.6
-55
-25 0 25 50 75 100 125
Tj, Junction Tempertature ( OC)
Figure 4. On-Resistance Variation
with Temperature
1.15
ID = -250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25 0 25 50 75 100 125
Tj, Junction Temperature ( oC)
Figure 6. Breakdown Voltage Variation
with Temperature
 
 
3 





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