Power MOSFET. RUH4040M2 Datasheet

RUH4040M2 MOSFET. Datasheet pdf. Equivalent

RUH4040M2 Datasheet
Recommendation RUH4040M2 Datasheet
Part RUH4040M2
Description N-Channel Advanced Power MOSFET
Feature RUH4040M2; RUH4040M2 N-Channel Advanced Power MOSFET Features • 40V/40A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V RDS (ON.
Manufacture Ruichips
Datasheet
Download RUH4040M2 Datasheet




Ruichips RUH4040M2
RUH4040M2
N-Channel Advanced Power MOSFET
Features
• 40V/40A,
RDS (ON) =5.5m(Typ.)@VGS=10V
RDS (ON) =8m(Typ.)@VGS=4.5V
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC/DC Converters
• On board power for server
• Synchronous rectification
Pin Description
D D DD
SSS G
PIN1
PDFN3333
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
ID
Continuous Drain Current@TA(VGS=10V)
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TA
S
N-Channel MOSFET
Rating
Unit
TC=25°C
40
±20
150
-55 to 150
40
V
°C
°C
A
TC=25°C
160 A
TC=25°C
40
TC=100°C 25 A
TA=25°C
18
TA=70°C
14
TC=25°C
34
TC=100°C 13 W
TA=25°C
4.2
TA=70°C
2.7
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2017
1
www.ruichips.com



Ruichips RUH4040M2
RUH4040M2
Symbol
Parameter
Rating Unit
RJC Thermal Resistance-Junction to Case
RJAThermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
3.72
30
EASAvalanche Energy, Single Pulsed
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
42
Symbol
Parameter
Test Condition
RUH4040M2
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS
Zero Gate Voltage Drain Current VDS=40V, VGS=0V
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON)
Drain-Source On-state Resistance VGS=4.5V, IDS=30A
VGS=10V, IDS=40A
40
1
30
12
±100
8 11
5.5 6.5
Diode Characteristics
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
1.2
9
15
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V,IDS=40A,
VGEN=10V,RG=4.7
1.3
580
130
65
5
24
35
12
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=32V, VGS=10V,
IDS=40A
24
5
3.5
°C/W
°C/W
mJ
Unit
V
µA
V
nA
m
m
V
ns
nC
pF
ns
nC
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2017
2
www.ruichips.com



Ruichips RUH4040M2
Notes:
RUH4040M2
① Max current is limited by the source bonding.
② Pulse width limited by safe operating area.
③ When mounted on 1 inch square copper board, t 10sec.
④ Limited by TJmax, IAS =13A, VDD =24V, RG = 50Ω , Starting TJ = 25°C.
⑤ Pulse test ; Pulse width300s, duty cycle2%.
⑥ Guaranteed by design, not subject to production testing.
Ordering and Marking Information
Device
RUH4040M2
Marking
4040
Package Packaging Quantity Reel Size Tape width
PDFN3333 Tape&Reel
5000
13''
12mm
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2017
3
www.ruichips.com





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