3429DE FET Datasheet

3429DE Datasheet, PDF, Equivalent


Part Number

3429DE

Description

Dual P-channel Enhancement Mode MOS FET

Manufacture

CXW

Total Page 5 Pages
Datasheet
Download 3429DE Datasheet


3429DE
Dual P-channelEnhancementMode
MOSFET
DESCRIPTION
The uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
VDS
ID
RDS(ON)( at VGS=-4.5V)
RDS(ON)( at VGS=-2.5V)
RDS(ON)( at VGS=-1.8V)
-20V
-30A
19 mohm
26 mohm
45 mohm
Trench Power LV MOSFET technology
High density cell design for Low RDS(ON)
High Speed switching
Application
PWM applications
Load switch
Power management
3429DE DATASHEET
(8) (7)
D1 D1
(6) (5)
D2 D2
(2) (4)
G1 G2
S1 S2
(1) (3)
P-Channel MOSFET
DFN3333
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TC=25
TC=100
Total Power Dissipation
TC=25
TC=100
Single Pulse Avalanche Energy B
Thermal Resistance Junction-to-Case C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
RθJC
TJ ,TSTG
1/5
Limit
-20
±10
-30
-19
-40
32
12.8
31
3.9
-55+155
Unit
V
V
A
A
W
W
mJ
/ W

3429DE
Dual P-channelEnhancementMode
MOSFET
3429DE DATASHEET
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
VSD
IS
VGS= 0V, ID=-250μA
VDS=-20V,VGS=0V,TC=25
VGS= ±10V, VDS=0V
VDS= VGS, ID=-250μA
VGS= -4.5V, ID=-15A
VGS= -2.5V, ID=-8A
VGS= -1.8V, ID=-6A
IS=-30A,VGS=0V
-20 V
-1 μA
±100
nA
-0.4 -0.62 -1.0
V
15.5 19
21 26 m
30 45
-0.8 -1.2
V
-30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Ciss
Coss
Crss
VDS=-10V,VGS=0V,f=1MHZ
2050
411
362
pF
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
VGS=-10V,VDS=-15V,ID=-15A
VGS=-10V,VDS=-15V, ID=-15A,
RGEN=2.5
30
5.3 nC
7.6
14
20
ns
95
65
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. Tj=25, VDD=-15V, VG=-10V, L=0.1mH, Rg=25Ω
C. Surface Mounted on FR4 Board, t 10 sec.
2/5


Features Dual P-channelEnhancementMode MOSFET D ESCRIPTION The uses advanced trench te chnology to provide excellent RDS(ON) a nd low gate charge. This device is suit able for use as a load switch or in PWM applications. GENERAL FEATURES ● V DS ● ID ● RDS(ON)( at VGS=-4.5V) RDS(ON)( at VGS=-2.5V) ● RDS(ON)( a t VGS=-1.8V) -20V -30A <19 mohm <2 6 mohm <45 mohm ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Application  PWM applicat ions  Load switch  Power manageme nt 3429DE DATASHEET (8) (7) D1 D1 (6 ) (5) D2 D2 (2) (4) G1 G2 S1 S2 (1) (3 ) P-Channel MOSFET DFN3333 ■ Absolut e Maximum Ratings (TA=25℃unless other wise noted) Parameter Symbol Drain-s ource Voltage Gate-source Voltage Dra in Current Pulsed Drain Current A TC=2 5℃ TC=100℃ Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Aval anche Energy B Thermal Resistance Junc tion-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG 1/5 Limit.
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