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3429DE Dataheets PDF



Part Number 3429DE
Manufacturers CXW
Logo CXW
Description Dual P-Channel MOSFET
Datasheet 3429DE Datasheet3429DE Datasheet (PDF)

Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -20V -30A <19 mohm <26 mohm <45 mohm ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Application  PWM applications  Load swit.

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RUH4040M2 3429DE 4512


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