3622DE FET Datasheet

3622DE Datasheet, PDF, Equivalent


Part Number

3622DE

Description

Dual N-channelEnhancement Mode MOS FET

Manufacture

CXW

Total Page 5 Pages
Datasheet
Download 3622DE Datasheet


3622DE
Dual N-channelEnhancementMode
MOSFET
DESCRIPTION
The uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < m Ω @ VGS=10V
RDS(ON) < mΩ @ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
3622DE DATASHEET
PDFN3333
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TC=25
TC=100
Total Power Dissipation
TC=25
TC=100
Single Pulse Avalanche Energy B
Thermal Resistance Junction-to-Case C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
RθJC
TJ ,TSTG
1/5
Limit
30
±20
35
22
140
20
15
16
45
-55+155
Unit
V
V
A
A
W
W
mJ
/ W

3622DE
Dual N-channelEnhancementMode
MOSFET
3622DE
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Paarraammeetteerr
Symbol
CCoonnddiittiioonnss
MMiinn
Typ
DATASHEET
Max
UUnniittss
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
IS
VGS= 0V, ID=250μA
VDS=30V,VGS=0V
TJ=25
TJ=55
VGS= ±20V, VDS=0V
VDS= VGS, ID=250μA
VGS= 10V, ID=15A
VGS= 4.5V, ID=15A
IS=15A,VGS=0V
30 V
1
μA
5
±100
nA
1.0 1.5 2.5
V
8.0 10
10 13
0.85 1.2
V
30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Ciss
Coss VDS=15V,VGS=0V,f=1MHZ
Crss
1020
225
126
pF
Total Gate Charge
Qg
28
Gate-Source Charge
Gate-Drain Charge
Qgs VGS=10V,VDS=15V,ID=30A
Qgd
7
nC
5
Reverse Recovery Chrage
Reverse Recovery Time
Qrr
IF=15A, di/dt=100A/us
trr
25
26
Turn-on Delay Time
tD(on)
8
Turn-on Rise Time
Turn-off Delay Time
ttrr
tD(off)
VGS=10V,VDD=20V,
ID=2A,RL=1Ω
RGEN=3Ω
15 ns
27
Turn-off fall Time
ttff
7
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Tj=25, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presentedhere
is based on mountin on a 1 in 2 pad of 2oz copper.
2/5


Features Dual N-channelEnhancementMode MOSFET DES CRIPTION The uses advanced trench techn ology to provide excellent RDS(ON) and low gate charge. This device is suitabl e for use as a load switch or in PWM ap plications. GENERAL FEATURES  RDS(ON ) < m Ω @ VGS=10V RDS(ON) < mΩ @ VG S=4.5V  High Power and current handi ng capability  Lead free product is acquired  Surface Mount Package Appl ication  PWM applications  Load s witch  Power management 3622DE DATA SHEET PDFN3333 ■ Absolute Maximum Ra tings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltag e Gate-source Voltage Drain Current P ulsed Drain Current A TC=25℃ TC=100 Total Power Dissipation TC=25℃ T C=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Ra nge VDS VGS ID IDM PD EAS RθJC TJ ,TS TG 1/5 Limit 30 ±20 35 22 140 20 15 16 45 -55~+155 Unit V V A A W W mJ / W ℃ Dual N-channelEnhancementMode MOSFET 3622DE ELECTRICAL CHARACTERISTICS (TA=25℃unless oth.
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