N-Channel MOSFET. 3622DE Datasheet

3622DE MOSFET. Datasheet pdf. Equivalent

3622DE Datasheet
Recommendation 3622DE Datasheet
Part 3622DE
Description Dual N-Channel MOSFET
Feature 3622DE; Dual N-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide exce.
Manufacture CXW
Datasheet
Download 3622DE Datasheet




CXW 3622DE
Dual N-channelEnhancementMode
MOSFET
DESCRIPTION
The uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < m Ω @ VGS=10V
RDS(ON) < mΩ @ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
3622DE DATASHEET
PDFN3333
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TC=25
TC=100
Total Power Dissipation
TC=25
TC=100
Single Pulse Avalanche Energy B
Thermal Resistance Junction-to-Case C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
RθJC
TJ ,TSTG
1/5
Limit
30
±20
35
22
140
20
15
16
45
-55+155
Unit
V
V
A
A
W
W
mJ
/ W



CXW 3622DE
Dual N-channelEnhancementMode
MOSFET
3622DE
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Paarraammeetteerr
Symbol
CCoonnddiittiioonnss
MMiinn
Typ
DATASHEET
Max
UUnniittss
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
IS
VGS= 0V, ID=250μA
VDS=30V,VGS=0V
TJ=25
TJ=55
VGS= ±20V, VDS=0V
VDS= VGS, ID=250μA
VGS= 10V, ID=15A
VGS= 4.5V, ID=15A
IS=15A,VGS=0V
30 V
1
μA
5
±100
nA
1.0 1.5 2.5
V
8.0 10
10 13
0.85 1.2
V
30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Ciss
Coss VDS=15V,VGS=0V,f=1MHZ
Crss
1020
225
126
pF
Total Gate Charge
Qg
28
Gate-Source Charge
Gate-Drain Charge
Qgs VGS=10V,VDS=15V,ID=30A
Qgd
7
nC
5
Reverse Recovery Chrage
Reverse Recovery Time
Qrr
IF=15A, di/dt=100A/us
trr
25
26
Turn-on Delay Time
tD(on)
8
Turn-on Rise Time
Turn-off Delay Time
ttrr
tD(off)
VGS=10V,VDD=20V,
ID=2A,RL=1Ω
RGEN=3Ω
15 ns
27
Turn-off fall Time
ttff
7
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Tj=25, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presentedhere
is based on mountin on a 1 in 2 pad of 2oz copper.
2/5



CXW 3622DE
Dual N-channelEnhancementMode
MOSFET
■ Typical Performance Characteristics
3622DE DATASHEET
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
3/5





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