Switching MOSFET. D607 Datasheet

D607 MOSFET. Datasheet pdf. Equivalent

D607 Datasheet
Recommendation D607 Datasheet
Part D607
Description N-ch and P-ch Fast Switching MOSFET
Feature D607; N-ch and P-ch Fast Switching MOSFET DESCRIPTION The is the highest performance trench N-Ch and P-Ch .
Manufacture CXW
Datasheet
Download D607 Datasheet




CXW D607
N-ch and P-ch Fast Switching MOSFET
DESCRIPTION
The is the highest performance
trench N-Ch and P-Ch MOSFETs With
extreme high cell density,which provide
excellent RDSON and gate charge for
most of the synchronous buck converter
applications.
D607 DATASHEET
GENERAL FEATURES
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 12A (VGS=10V)
-12A (VGS = -10V)
RDS(ON)
RDS(ON)
< 29 m(VGS=10V)
< 55 m(VGS = -10V)
< 40 m(VGS=4.5V) < 68 m(VGS = -4.5V)
100% UIS Tested!
Application
Drivers: Relays, lamps, Memories.
Battery operated systems.
CCFL Back-light Inverter
XX
Absolute Maximum Ratings (TA=25unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID
IDM
TJ
TSTG
PD
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ,(VGS=10V)
Drain Current (Pulse)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation (Ta=25)
Rating
N-Ch
P-Ch
30 -30
±20
±20
12 -12
40 -40
-55 TO 175
-55 TO 175
25 25
Unit
V
A
A
°C
W



CXW D607
N-ch and P-ch Fast Switching MOSFET
D607 DATASHEET
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PPaarraammeetetrer
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CCoonndditiitoionsns
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Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS= 0V, ID=250μA
VDS=36V,VGS=0V
TJ=25
TJ=85
VGS= ±20V, VDS=0V
30
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1.0
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=12A
VGS= 4.5V, ID=5A
Diode Forward Voltage
Thermal Resistance Jun-ction to Ambient
VSD
RθJA
IS=2A,VGS=0V
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss VDS=15V,VGS=0V,f=1MHZ
Reverse Transfer Capacitance
Crss
Switching Parameters
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Reverse time
Qgs VGS=4.5V,VDS=15V,ID=5.6A
Qgd
tr
Fall Time
trr
VGS=4.5V,VDD=15V, ID=1A,
RGEN=2.8Ω
Turn-on Delay Time
tD(on)
Turn-off Delay Time
tD(off)
TTyypp
MMaaxx
UUnnitists
V
1
μA
30
±100
nA
1.5 2.0
V
21 29
27 40
0.8 1.3 V
23 °C/W
92
68
5.2
0.9
1.3
2.5
3.5
4.5
14.5
pF
nC
ns



CXW D607
N-ch and P-ch Fast Switching MOSFET
D607 DATASHEET
PPaarraammeetetrer
SSyymmbbooll
CCoonndditiitoionsns
MMinin
TTyypp
MMaaxx
UUnnitists
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
VGS= 0V, ID= -250uA
IDSS VDS=-32V ,VGS=0V
TJ=25
TJ=85
IGSS VGS= ±20V, VDS=0V
-30
-1
-30
±100
V
μA
nA
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
RDS(ON)
VDS= VGS, ID=250μA
VGS= -10V , ID= -8A
VGS= -4.5V , ID= -5A
-1.
-1..5 -2..4
V
40 55
53 68
Diode Forward Voltage
Thermal Resistance Junction to Ambient
Dynamic Parameters
Input Capacitance
VSD
RθJA
Ciss
IS=2A,VGS=0V
-0..8
23
-1.2 V
°C/W
520
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=-15V,VGS=0V,f=1MHZ
98 pF
74
Switching Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Qg
Qgs VGS=-10V,VDS=-15V,ID=-4.1A
Qgd
tr
6.8
1.0
nC
1.4
14
Turn-on Rise Time
trr
VGS=-10V,VDD=-15V, RL=15Ω,ID=-1A,
RGEN=2.5Ω
61
Turn-Off Delay Time
tD(on)
19.
ns
Turn-Off Fall Time
tD(off)
7
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Tj=25, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presentedhere
is based on mounting on a 1 in 2 pad of 2oz copper.





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