D607 MOSFET Datasheet

D607 Datasheet, PDF, Equivalent


Part Number

D607

Description

N-ch and P-ch Fast Switching MOSFET

Manufacture

CXW

Total Page 8 Pages
Datasheet
Download D607 Datasheet


D607
N-ch and P-ch Fast Switching MOSFET
DESCRIPTION
The is the highest performance
trench N-Ch and P-Ch MOSFETs With
extreme high cell density,which provide
excellent RDSON and gate charge for
most of the synchronous buck converter
applications.
D607 DATASHEET
GENERAL FEATURES
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 12A (VGS=10V)
-12A (VGS = -10V)
RDS(ON)
RDS(ON)
< 29 m(VGS=10V)
< 55 m(VGS = -10V)
< 40 m(VGS=4.5V) < 68 m(VGS = -4.5V)
100% UIS Tested!
Application
Drivers: Relays, lamps, Memories.
Battery operated systems.
CCFL Back-light Inverter
XX
Absolute Maximum Ratings (TA=25unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID
IDM
TJ
TSTG
PD
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ,(VGS=10V)
Drain Current (Pulse)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation (Ta=25)
Rating
N-Ch
P-Ch
30 -30
±20
±20
12 -12
40 -40
-55 TO 175
-55 TO 175
25 25
Unit
V
A
A
°C
W

D607
N-ch and P-ch Fast Switching MOSFET
D607 DATASHEET
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PPaarraammeetetrer
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CCoonndditiitoionsns
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Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS= 0V, ID=250μA
VDS=36V,VGS=0V
TJ=25
TJ=85
VGS= ±20V, VDS=0V
30
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1.0
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=12A
VGS= 4.5V, ID=5A
Diode Forward Voltage
Thermal Resistance Jun-ction to Ambient
VSD
RθJA
IS=2A,VGS=0V
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss VDS=15V,VGS=0V,f=1MHZ
Reverse Transfer Capacitance
Crss
Switching Parameters
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Reverse time
Qgs VGS=4.5V,VDS=15V,ID=5.6A
Qgd
tr
Fall Time
trr
VGS=4.5V,VDD=15V, ID=1A,
RGEN=2.8Ω
Turn-on Delay Time
tD(on)
Turn-off Delay Time
tD(off)
TTyypp
MMaaxx
UUnnitists
V
1
μA
30
±100
nA
1.5 2.0
V
21 29
27 40
0.8 1.3 V
23 °C/W
92
68
5.2
0.9
1.3
2.5
3.5
4.5
14.5
pF
nC
ns


Features N-ch and P-ch Fast Switching MOSFET DESC RIPTION The is the highest performance trench N-Ch and P-Ch MOSFETs With extre me high cell density,which provide exce llent RDSON and gate charge for most of the synchronous buck converter applica tions. D607 DATASHEET GENERAL FEATURE S Features n-channel p-channel VDS (V) = 30V -30V ID = 12A (VGS=10V) -1 2A (VGS = -10V) RDS(ON) RDS(ON) < 29 mΩ (VGS=10V) < 55 mΩ (VGS = -10V) < 40 mΩ (VGS=4.5V) < 68 mΩ (VGS = -4.5V) 100% UIS Tested! Application ◆ Drivers: Relays, lamps, Memories. Battery operated systems. ◆ CCFL B ack-light Inverter XX ■ Absolute Ma ximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter VDSS VGSS I D IDM TJ TSTG PD Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent ,(VGS=10V) Drain Current (Pulse) Maximum Junction Temperature Storage Te mperature Range Maximum Power Dissipati on (Ta=25℃) Rating N-Ch P-Ch 30 - 30 ±20 ±20 12 -12 40 -40 -55 TO 175 -55 TO 175 25 25 Unit V A A °C W N-ch and.
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