N-Channel MOSFET. RU1Z120R3 Datasheet

RU1Z120R3 MOSFET. Datasheet pdf. Equivalent

RU1Z120R3 Datasheet
Recommendation RU1Z120R3 Datasheet
Part RU1Z120R3
Description N-Channel MOSFET
Feature RU1Z120R3; RU1Z120R3 N-Channel Advanced Power MOSFET Features • 150V/120A RDS (ON) =11mΩ(Typ.)@VGS=10V • Insul.
Manufacture Ruichips
Datasheet
Download RU1Z120R3 Datasheet




Ruichips RU1Z120R3
RU1Z120R3
N-Channel Advanced Power MOSFET
Features
• 150V/120A
RDS (ON) =11m(Typ.)@VGS=10V
• Insulation Slug(VISO1500VAC)
• Reliable and Rugged
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
• Automotive applications and a wide variety of other applications
Pin Description
Insulation Slug
SDG
TO220S
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
IDContinuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
150
±25
175
-55 to 175
120
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
480 A
120
A
85
375
W
188
0.4 °C/W
62.5
°C/W
552 mJ
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
1
www.ruichips.com



Ruichips RU1Z120R3
RU1Z120R3
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1Z120R3
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS
Zero Gate Voltage Drain Current VDS=150V, VGS=0V
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)Drain-Source On-state Resistance VGS=10V, IDS=60A
Diode Characteristics
150
1
30
2.5 3.3 4.5
±100
11 15
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=60A, VGS=0V
ISD=60A, dlSD/dt=100A/µs
1.2
56
102
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=75V,
Frequency=1.0MHz
VDD=75V,IDS=60A,
VGEN=10V,RG=6
1.5
4900
1010
220
20
98
105
52
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=120V, VGS=10V,
IDS=60A
95
25
30
Unit
V
µA
V
nA
m
V
ns
nC
pF
ns
nC
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
Limited by TJmax, IAS =47A, VDD = 48V, RG = 50, Starting TJ = 25°C.
Pulse test;Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
2
www.ruichips.com



Ruichips RU1Z120R3
RU1Z120R3
Ordering and Marking Information
Device
RU1Z120R3
Marking
RU1Z120R3
Package Packaging Quantity Reel Size Tape width
TO220S
Tube
50
-
-
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
3
www.ruichips.com





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