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1N4003G-K Dataheets PDF



Part Number 1N4003G-K
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated Rectifier
Datasheet 1N4003G-K Datasheet1N4003G-K Datasheet (PDF)

4 1N4001G-K - 1N4007G-K Taiwan Semiconductor 1A, 50V - 1000V Glass Passivated Rectifier FEATURES ● Glass passivated chip junction ● High current capability, Low VF ● High reliability ● High surge current capability ● Low power loss, high efficiency ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● TV ● Monitor KEY PARAMETERS PARAMETER IF(AV) VRRM IFSM TJ MAX P.

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4 1N4001G-K - 1N4007G-K Taiwan Semiconductor 1A, 50V - 1000V Glass Passivated Rectifier FEATURES ● Glass passivated chip junction ● High current capability, Low VF ● High reliability ● High surge current capability ● Low power loss, high efficiency ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● TV ● Monitor KEY PARAMETERS PARAMETER IF(AV) VRRM IFSM TJ MAX Package VALUE 1 UNIT A 50 - 1000 V 30 A 150 °C DO-204AL (DO-41) Configuration Single Die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.33 g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 SYMBOL UNIT G-K G-K G-K G-K G-K G-K G-K Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Maximum DC blocking voltage VRRM VR(RMS) VDC 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 V V V Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature Storage temperature IF(AV) IFSM TJ TSTG 1 30 - 55 to +150 - 55 to +150 A A °C °C 1 Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA LIMIT 80 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode (1) Reverse current @ rated VR per diode (2) Junction capacitance Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms CONDITIONS IF = 1A,TJ = 25°C TJ = 25°C TJ = 125°C 1 MHz, VR=4.0V SYMBOL VF IR CJ TYP 10 MAX 1 5 100 - UNIT V µA µA pF ORDERING INFORMATION PART NO. PACKIN G CODE A0 PACKING CODE SUFFIX 1N400xG-K (Note 1, 2) R0 R1 G B0 Notes: 1. "x" defines voltage from 50V (1N4001G-K) to 1000V (1N4007G-K) 2. Whole series with green compound (halogen-free) PACKAGE DO-41 DO-41 DO-41 DO-41 PACKING 3,000 / Ammo box (52mm taping) 5,000 / 13" Paper reel 5,000 / 13" Paper reel (Reverse) 1,000 / Bulk packing EXAMPLE P/N EXAMPLE P/N 1N4001G-K A0G PART NO. 1N4001G-K PACKING CODE A0 PACKING CODE SUFFIX G DESCRIPTION Green compound 2 Version:A1612 AVERAGE FORWARD CURRENT (A) 4 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig1. Forward Current Derating Curve 1.5 1N4001G-K - 1N4007G-K Taiwan Semiconductor Fig2. Typical Junction Capacitance 100 CAPACITANCE (pF) 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE(oC) 150 10 f=1.0MHz Vsig=50mVp-p 1 0.1 1 10 REVERSE VOLTAGE (V) 100 Fig3. Typical Reverse Characteristics 100 TJ=125° 10 1 TJ=75°C 0.1 TJ=25°C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) Fig4. Typical Forward Characteristics 10 10 1 0.1 1 UF1DLW TJ=125°C TJ=25°C 0.01 Pulse width 0.001 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 FORWARD VOLTAGE (V) 1.2 (A) INSTANTANEOUS REVERSE CURRENT (μA) 3 Version:A1612 PEAK FORWARD SURGE CURRENT(A) 4 Fig5. Maximum Non-repetitive Forward Surge Current 30 25 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 1N4001G-K - 1N4007G-K Taiwan Semiconductor 4 Version:A1612 4 PACKAGE OUTLINE DIMENSIONS DO-204AL (DO-41) 1N4001G-K - 1N4007G-K Taiwan Semiconductor DIM. A B C D E Unit (mm) Min Max 2.00 2.70 0.71 0.86 25.40 - 4.20 5.20 25.40 - Unit (inch) Min Max 0.079 0.106 0.028 0.034 1.000 - 0.165 0.205 1.000 - MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code 5 Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Custom.


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