BTP5401A3 Transistor Datasheet

BTP5401A3 Datasheet, PDF, Equivalent


Part Number

BTP5401A3

Description

General Purpose PNP Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 4 Pages
Datasheet
Download BTP5401A3 Datasheet


BTP5401A3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP5401A3
Description
The BTP5401A3 is designed for general purpose amplification.
Large IC , IC( Max) = -0.6A
High BVCEO, BVCEO= -150V
Complementary to BTN5551A3.
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
Symbol
BTP5401A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
EBC
Limits
-160
-150
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP5401A3
CYStek Product Specification

BTP5401A3
CYStech Electronics Corp.
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
hFE 1
hFE 2
hFE 3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
56
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Classification Of hFE 2
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
390
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-120V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Rank
Range
K
56~120
P
82~180
Q
120~270
R
180~390
BTP5401A3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTP54 01A3 Description • The BTP5401A3 is d esigned for general purpose amplificati on. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Complemen tary to BTN5551A3. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/4 Symbol BTP5401A3 Outl ine TO-92 B:Base C:Collector E: Emitter Absolute Maximum Ratings (Ta=2 5°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipa tion Thermal Resistance, Junction to Am bient Junction Temperature Storage Temp erature Symbol VCBO VCEO VEBO IC Pd R JA Tj Tstg EBC Limits -160 -150 -5 -0 .6 625 200 150 -55~+150 Unit V V V A m W °C/W °C °C BTP5401A3 CYStek Prod uct Specification CYStech Electronics Corp. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 2 /4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 h.
Keywords BTP5401A3, datasheet, pdf, CYStech, General, Purpose, PNP, Epitaxial, Planar, Transistor, TP5401A3, P5401A3, 5401A3, BTP5401A, BTP5401, BTP540, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)