Planar Transistor. BTP9050N3 Datasheet

BTP9050N3 Transistor. Datasheet pdf. Equivalent

BTP9050N3 Datasheet
Recommendation BTP9050N3 Datasheet
Part BTP9050N3
Description High Voltage PNP Epitaxial Planar Transistor
Feature BTP9050N3; CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor BTP9050N3 Spec. No. : C619N3.
Manufacture CYStech
Datasheet
Download BTP9050N3 Datasheet




CYStech BTP9050N3
CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTP9050N3
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date : 2014.08.06
Page No. : 1/8
Description
High breakdown voltage. (BVCEO=-500V)
Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.
Complementary to BTNA45N3
Pb-free lead plating and halogen-free package
Symbol
BTP9050N3
Outline
SOT-23
C
BBase CCollector
EEmitter
E
B
Ordering Information
Device
BTP9050N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7reel
Product rank, zero for no rank products
Product name
BTP9050N3
CYStek Product Specification



CYStech BTP9050N3
CYStech Electronics Corp.
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date : 2014.08.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current , single pulse, pulse width tp<1ms
Peak Base Current, single pulse, pulse width tp<1ms
Power Dissipation
Operating Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
Tj ; Tstg
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limits
-500
-500
-5
-150
-500
-200
300 (Note)
-55~+150
Unit
V
V
V
mA
mA
mA
mW
C
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient, in free air (Note)
Rth,j-a
Thermal Resistance, Junction-to-Solder point
Rth,j-sp
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limit
417
70
Unit
C/W
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Cib
Min.
-500
-500
-5
-
-
-
-
-
-
100
80
40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
50
12
85
Max.
-
-
-
-100
-100
-1
-0.5
-0.5
-0.9
300
300
-
-
-
-
Unit
V
V
V
nA
nA
μA
V
V
V
-
-
-
MHz
pF
pF
Test Conditions
IC=-100μA
IC=-1mA
IE=-50μA
VCB=-480V
VCE=-480V, VBE=0V
VEB=-5V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-10mA
IC=-50mA, IB=-10mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-10mA, f=10MHz
VCB=-10V, IE=0A, f=1MHz
VEB=-0.5V, IC=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTP9050N3
CYStek Product Specification



CYStech BTP9050N3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date : 2014.08.06
Page No. : 3/8
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
12 3 45
-VCE , Collector-to-Emitter Voltage(V)
6
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
1mA
-IB=500uA
1 234 5
-VCE , Collector-to-Emitter Voltage(V)
6
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
-IB=2mA
12 3 45
-VCE , Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
50mA
25mA
15mA
10mA
-IB=5mA
1 234 5
-VCE , Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
100
125°C
75°C
25°C
10
-VCE=5V
1
1 10 100
-IC, Collector Current(mA)
1000
100 125°C
75°C
25°C
10
-VCE=10V
1
1 10 100
-IC, Collector Current(mA)
1000
BTP9050N3
CYStek Product Specification





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