CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTP9050N3
Spec. No. : C619N3 Issued Date : 2012....
CYStech Electronics Corp.
High Voltage
PNP Epitaxial Planar
Transistor
BTP9050N3
Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : 2014.08.06 Page No. : 1/8
Description
High breakdown voltage. (BVCEO=-500V) Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. Complementary to BTNA45N3 Pb-free lead plating and halogen-free package
Symbol
BTP9050N3
Outline
SOT-23 C
B:Base C:Collector E:Emitter
E B
Ordering Information
Device BTP9050N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
BTP9050N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : 2014.08.06 Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current , single pulse, pulse width tp<1ms Peak Base Current, single pulse, pulse width tp<1ms Power Dissipation Operating Junction and Storage Temperature Range
VCBO VCEO VEBO
IC ICM IBM PD Tj ; Tstg
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limits
-500 -500 -5 -150 -500 -200 300 (Note) -55~+150
Unit
V V V mA mA mA mW C
Therma...