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BTP949L3 Dataheets PDF



Part Number BTP949L3
Manufacturers CYStech
Logo CYStech
Description PNP Epitaxial Planar Power Transistor
Datasheet BTP949L3 DatasheetBTP949L3 Datasheet (PDF)

CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor BTP949L3 Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 1/6 Features • Extremely low equivalent on-resistance, RCE(sat) = 75mΩ(max) @ IC = -3A, IB=-0.1A • 6A continuous current(up to 20A peak) • Excellent current gain linearity • Pb-free package Symbol BTP949L3 Outline C SOT-223 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltag.

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CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor BTP949L3 Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 1/6 Features • Extremely low equivalent on-resistance, RCE(sat) = 75mΩ(max) @ IC = -3A, IB=-0.1A • 6A continuous current(up to 20A peak) • Excellent current gain linearity • Pb-free package Symbol BTP949L3 Outline C SOT-223 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) Collector Current (Pulse) IC ICP -5.5 -20 (Note 1) A Power Dissipation @ TA=25℃ Ptot 3 (Note 2) W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. 2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. BTP949L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol *BVCEO BVCBO BVCER BVEBO ICER ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 *hFE 4 fT Cob ton toff Min. -30 -50 -50 -6 100 100 60 - - Typ. -60 -100 -190 -380 -1.1 200 200 80 10 100 122 120 130 Max. -50 -50 -10 -75 -140 -270 -440 -1.25 -1.06 300 - - Unit V V V V µA nA nA mV mV mV mV V V MHz pF ns ns Test Conditions IC=-10mA, IB=0 IC=-100µA, IE=0 IC=-1µA, RBE≤1kΩ IE=-100µA, IC=0 VCE=-40V, RBE≤1kΩ VCB=-40V, IB=0 VEB=-6V, IC=0 IC=-500mA, IB=-20mA IC=-1A, IB=-20mA IC=-2A, IB=-200mA IC=-5.5A, IB=-500mA IC=-5.5A, IB=-500mA VCE=-1V, IC=-5.5A VCE=-1V, IC=-10mA VCE=-1V, IC=-1A VCE=-1V, IC=-5A VCE=-2V, IC=-20A VCE=-10V, IC=-100mA, f=50MHz VCB=-10V, f=1MHz VCC=-10V, IC=10IB1=-10IB2=4A, RL=2.5Ω *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTN949L3 Package SOT-223 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking P949 BTP949L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 3/6 Characteristic Curves Current Gain---HFE Current Gain vs Collector Current 1000 VCE=2V 100 VCE=1V 10000 Saturation Voltage vs Collector Current VCE(SAT) 1000 100 IC=30IB IC=50IB Saturation Voltage---(mV) Saturation Voltage---(mV) 10 1 10 100 1000 Collector Current---IC(mA) 10000 10000 Saturation Voltage vs Collector Current VBE(SAT)@IC=50IB 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) 10000 Grounded Emitter Output Characteristics 4000 3500 20mA 3000 2500 2000 10mA 1500 1000 500 0 0 6mA 2mA IB=0 12345 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(mA) Grounded Emitter Output Characteristics 8000 7000 6000 5000 4000 3000 2000 1000 0 0 50mA 25mA 10mA 5mA IB=0mA 12345 Collector-to-Emitter Voltage---VCE(V) 6 Power Dissipation---PD(W) 3.5 3 2.5 2 1.5 1 0.5 0 0 Power Derating Curve 50 100 150 Ambient Temperature---TA(℃) 200 BTP949L3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 4/6 BTP949L3 CYStek Product Specification CYStech Electronics Corp. Carrier Tape Dimension Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 5/6 BTP949L3 CYStek Product Specification CYStech Electronics Corp. SOT-223 Dimension Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 6/6 A Marking: B 1 C 23 P949 D E F G Style: Pin 1.Base 2.Collector 3.Emitter H a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 DIM Inches Min. Max. A 0.1142 0.1220 B 0.2638 0.2874 C 0.1299 0.1457 D 0.0236 0.0315 E *0.0906 - F 0.2480 0.2638 Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 - 6.30 6.70 DIM Inches Min. Max. G 0.0551 0.0709 H 0.0098 0.0138 I 0.0008 0.0039 a1 *13o - a2 0 o 10 o *: Typical Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o - 0 o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Su.


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