BTP949L3 Transistor Datasheet

BTP949L3 Datasheet, PDF, Equivalent


Part Number

BTP949L3

Description

PNP Epitaxial Planar Power Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTP949L3 Datasheet


BTP949L3
CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
BTP949L3
Spec. No. : C657L3
Issued Date : 2005.10.14
Revised Date :
Page No. : 1/6
Features
Extremely low equivalent on-resistance, RCE(sat) = 75m(max) @ IC = -3A, IB=-0.1A
6A continuous current(up to 20A peak)
Excellent current gain linearity
Pb-free package
Symbol
BTP949L3
Outline
C
SOT-223
BBase
CCollector
EEmitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50 V
Collector-Emitter Voltage
VCEO
-30 V
Emitter-Base Voltage
VEBO
-6 V
Collector Current (DC)
Collector Current (Pulse)
IC
ICP
-5.5
-20 (Note 1)
A
Power Dissipation @ TA=25
Ptot
3 (Note 2)
W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
-55~+150
°C
Note : 1. Single Pulse , Pw380µs, Duty2%.
2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper
equal to 4 square inch minimum.
BTP949L3
CYStek Product Specification

BTP949L3
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.10.14
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
*BVCEO
BVCBO
BVCER
BVEBO
ICER
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
toff
Min.
-30
-50
-50
-6
-
-
-
-
-
-
-
-
-
100
100
60
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-60
-100
-190
-380
-1.1
-
200
200
80
10
100
122
120
130
Max.
-
-
-
-
-50
-50
-10
-75
-140
-270
-440
-1.25
-1.06
-
300
-
-
-
-
-
-
Unit
V
V
V
V
µA
nA
nA
mV
mV
mV
mV
V
V
-
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=-10mA, IB=0
IC=-100µA, IE=0
IC=-1µA, RBE1k
IE=-100µA, IC=0
VCE=-40V, RBE1k
VCB=-40V, IB=0
VEB=-6V, IC=0
IC=-500mA, IB=-20mA
IC=-1A, IB=-20mA
IC=-2A, IB=-200mA
IC=-5.5A, IB=-500mA
IC=-5.5A, IB=-500mA
VCE=-1V, IC=-5.5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-1A
VCE=-1V, IC=-5A
VCE=-2V, IC=-20A
VCE=-10V, IC=-100mA, f=50MHz
VCB=-10V, f=1MHz
VCC=-10V, IC=10IB1=-10IB2=4A,
RL=2.5Ω
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
BTN949L3
Package
SOT-223
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
P949
BTP949L3
CYStek Product Specification


Features CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor BTP949L3 Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 1/6 Features • Extremely low equivalent on-resist ance, RCE(sat) = 75mΩ(max) @ IC = -3A , IB=-0.1A • 6A continuous current(up to 20A peak) • Excellent current gai n linearity • Pb-free package Symbol BTP949L3 Outline C SOT-223 B:Base C:Collector E:Emitter E C B Abso lute Maximum Ratings (Ta=25°C) Parame ter Symbol Limits Unit Collector-Ba se Voltage VCBO -50 V Collector-Emit ter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) Collector Current (Pulse) IC ICP -5.5 -20 (Note 1) A Power Dissipatio n @ TA=25℃ Ptot 3 (Note 2) W Junc tion Temperature Tj 150 °C Storage T emperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380µs, Duty≦ 2%. 2. The power which can be dissipat ed assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. BTP949L3 CYStek.
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