Power Transistor. BTP949L3 Datasheet

BTP949L3 Transistor. Datasheet pdf. Equivalent

BTP949L3 Datasheet
Recommendation BTP949L3 Datasheet
Part BTP949L3
Description PNP Epitaxial Planar Power Transistor
Feature BTP949L3; CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor BTP949L3 Spec. No. : C657L3 Issued .
Manufacture CYStech
Datasheet
Download BTP949L3 Datasheet





CYStech BTP949L3
CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
BTP949L3
Spec. No. : C657L3
Issued Date : 2005.10.14
Revised Date :
Page No. : 1/6
Features
Extremely low equivalent on-resistance, RCE(sat) = 75m(max) @ IC = -3A, IB=-0.1A
6A continuous current(up to 20A peak)
Excellent current gain linearity
Pb-free package
Symbol
BTP949L3
Outline
C
SOT-223
BBase
CCollector
EEmitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50 V
Collector-Emitter Voltage
VCEO
-30 V
Emitter-Base Voltage
VEBO
-6 V
Collector Current (DC)
Collector Current (Pulse)
IC
ICP
-5.5
-20 (Note 1)
A
Power Dissipation @ TA=25
Ptot
3 (Note 2)
W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
-55~+150
°C
Note : 1. Single Pulse , Pw380µs, Duty2%.
2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper
equal to 4 square inch minimum.
BTP949L3
CYStek Product Specification



CYStech BTP949L3
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.10.14
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
*BVCEO
BVCBO
BVCER
BVEBO
ICER
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
toff
Min.
-30
-50
-50
-6
-
-
-
-
-
-
-
-
-
100
100
60
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-60
-100
-190
-380
-1.1
-
200
200
80
10
100
122
120
130
Max.
-
-
-
-
-50
-50
-10
-75
-140
-270
-440
-1.25
-1.06
-
300
-
-
-
-
-
-
Unit
V
V
V
V
µA
nA
nA
mV
mV
mV
mV
V
V
-
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=-10mA, IB=0
IC=-100µA, IE=0
IC=-1µA, RBE1k
IE=-100µA, IC=0
VCE=-40V, RBE1k
VCB=-40V, IB=0
VEB=-6V, IC=0
IC=-500mA, IB=-20mA
IC=-1A, IB=-20mA
IC=-2A, IB=-200mA
IC=-5.5A, IB=-500mA
IC=-5.5A, IB=-500mA
VCE=-1V, IC=-5.5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-1A
VCE=-1V, IC=-5A
VCE=-2V, IC=-20A
VCE=-10V, IC=-100mA, f=50MHz
VCB=-10V, f=1MHz
VCC=-10V, IC=10IB1=-10IB2=4A,
RL=2.5Ω
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
BTN949L3
Package
SOT-223
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
P949
BTP949L3
CYStek Product Specification



CYStech BTP949L3
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.10.14
Revised Date :
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=2V
100
VCE=1V
10000
Saturation Voltage vs Collector Current
VCE(SAT)
1000
100 IC=30IB
IC=50IB
10
1
10 100 1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=50IB
1000
100
1
10 100 1000
Collector Current---IC(mA)
10000
10
1
10 100 1000
Collector Current---IC(mA)
10000
Grounded Emitter Output Characteristics
4000
3500
20mA
3000
2500
2000
10mA
1500
1000
500
0
0
6mA
2mA
IB=0
12345
Collector-to-Emitter Voltage---VCE(V)
6
Grounded Emitter Output Characteristics
8000
7000
6000
5000
4000
3000
2000
1000
0
0
50mA
25mA
10mA
5mA
IB=0mA
12345
Collector-to-Emitter Voltage---VCE(V)
6
3.5
3
2.5
2
1.5
1
0.5
0
0
Power Derating Curve
50 100 150
Ambient Temperature---TA(℃)
200
BTP949L3
CYStek Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)