AP3R303GMT-L

Advanced Power Electronics Corp. AP3R303GMT-L Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D BVDSS ▼ SO-8 Compatible with Heatsink RDS(ON) ▼ Low On-resistance G ID5 ▼ RoHS Compliant & Halogen-Free S Description AP3R303 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6L ppackage is special for voltage conversion application S S using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S G 30V 3.3mΩ 105A D D D D PMPAK® 5x6L Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V5 Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 105 31 25 250 56.8 5 28.8 -55 to 150 -55 to 150 V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data & specifications subject to change with...