POWER MOSFET. AP3R303GMT-L Datasheet

AP3R303GMT-L MOSFET. Datasheet pdf. Equivalent

Part AP3R303GMT-L
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP3R303GMT-L Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER.
Manufacture Advanced Power Electronics
Datasheet
Download AP3R303GMT-L Datasheet

Advanced Power Electronics Corp. AP3R303GMT-L Halogen-Free AP3R303GMT-L Datasheet
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AP3R303GMT-L
Advanced Power
Electronics Corp.
AP3R303GMT-L
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D BVDSS
SO-8 Compatible with Heatsink
RDS(ON)
Low On-resistance
G ID5
RoHS Compliant & Halogen-Free
S
Description
AP3R303 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The
PMPAK ®
5x6L
ppackage
is
special
for
voltage
conversion
application
S
S
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
S
G
30V
3.3mΩ
105A
D
D
D
D
PMPAK® 5x6L
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V5
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
30
+20
105
31
25
250
56.8
5
28.8
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
2.2
25
Units
/W
/W
1
201601261



AP3R303GMT-L
AP3R303GMT-L
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=30A
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
f=1.0MHz
30 - - V
- - 3.3 m
- - 4.5 m
1 - 3V
- 60 -
S
- - 10 uA
- - +100 nA
- 13.3 21 nC
- 2.5
nC
- 7.2
nC
- 8 - ns
- 5.5 - ns
- 25 - ns
- 17 - ns
- 1400 2240 pF
- 440 -
pF
- 170 - pF
- 1.4 2.8 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 35 - ns
- 32 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
5.Package limitation current is 60A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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