N-Channel MOSFET. 7N60F Datasheet

7N60F MOSFET. Datasheet pdf. Equivalent


Part 7N60F
Description 600V N-Channel MOSFET
Feature 600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe.
Manufacture GFD
Datasheet
Download 7N60F Datasheet


7N60(F,B,H) 7A mps,600 Volts N-CHANNEL MOSFET FEATURE  7 7N60F Datasheet
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET 7N60F Datasheet
Recommendation Recommendation Datasheet 7N60F Datasheet




7N60F
600V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS technology.
This latest technology has been especially
designed to minimize on-state resistance,
Have a high rugged avalanche
characteristics.These devices are well suited
for high efficiency switched mode power
supplies, active power factor
correction.electronic lamp ballasts based on
half bridge topology.
7N60/7N60F
VDSS RDS(ON)
ID
600V
1.3Ω
7A
Features
• 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V
• Low gate charge ( typical 29nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
7N60/7N60F TO-220/220F 0GFD
www.goford.cn TEL0755-86350980 FAX0755-86350963



7N60F
7N60/7N60F
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
7N60
7N60F
VDSS
ID
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
600
7.0 7.0
4.2 4.2
IDM Drain Current- Pulsed
(Note 1)
28
28
VGSS
Gate-Source Voltage
± 30
EAS
Single Pulsed Avalanche Energy
(Note 2)
245
Units
V
A
A
A
V
mJ
EAR Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,
1/8" from case for 5 seconds
147
1.17
48
0.38
-55 to +150
300
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
7N60
7N60F
Units
RθJC
Thermal Resistance, Junction-to-Case
0.85 2.6 °C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5 -- °C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
www.goford.cn TEL0755-86350980 FAX0755-86350963





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