Silicon MOSFET. 2SK2532 Datasheet

2SK2532 MOSFET. Datasheet pdf. Equivalent


Part 2SK2532
Description N-Channel Silicon MOSFET
Feature Ordering number : EN5457 2SK2532 SANYO Semiconductors DATA SHEET 2SK2532 N-Channel Silicon MOSFE.
Manufacture Sanyo
Datasheet
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Ordering number : EN5457 2SK2532 SANYO Semiconductors DATA 2SK2532 Datasheet
Recommendation Recommendation Datasheet 2SK2532 Datasheet




2SK2532
Ordering number : EN5457
2SK2532
SANYO Semiconductors
DATA SHEET
2SK2532
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
High-speed diode.
Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
ID=1mA, VGS=0V
IG=±100μA, VDS=0V
VDS=250V, VGS=0V
VGS=±25V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
Ratings
250
±30
10
40
40
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
250
±30
2.0
5.0
Ratings
typ
max
Unit
V
V
1.0 mA
±10 μA
3.0 V
8.5 S
280 390 mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42308QA TI IM TC-00001325 No.5457-1/3



2SK2532
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Package Dimensions
unit : mm (typ)
7002-001
8.2
7.8
6.2
3
12
1.0 1.0
2.54 2.54
5.08
10.0
6.0
2SK2532
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=10A, VGS=0V
IS=10A, di/dt=100A/μs
Ratings
min typ max
Unit
900 pF
210 pF
85 pF
17 ns
41 ns
270 ns
80 ns
1.0 1.5 V
140 ns
Switching Time Test Circuit
0.6
0.3
0.6
1 : Gate
7.8 2 : Source
3 : Drain
SANYO : ZP
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=100V
ID=5A
RL=20Ω
D VOUT
2SK2532
P.G 50Ω S
7
5 IDP=40A
3
2
10 ID=10A
7
5
3
2
ASO
PW10μs
1.0
7 Operation in
5 this area is
3 limited by RDS(on).
2 Tc=25°C
0.1 Single pulse
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V
23 5
IT13347
PD -- Tc
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT13327
No.5457-2/3







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