Silicon MOSFET. 2SK2534 Datasheet

2SK2534 MOSFET. Datasheet pdf. Equivalent


Part 2SK2534
Description N-Channel Silicon MOSFET
Feature Ordering number : EN8612 2SK2534 SANYO Semiconductors DATA SHEET 2SK2534 N-Channel Silicon MOSFE.
Manufacture Sanyo
Datasheet
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Ordering number : EN8612 2SK2534 SANYO Semiconductors DATA 2SK2534 Datasheet
Recommendation Recommendation Datasheet 2SK2534 Datasheet




2SK2534
Ordering number : EN8612
2SK2534
SANYO Semiconductors
DATA SHEET
2SK2534
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
High-speed switching.
Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
Tc=25˚C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
IG= ±100μA, VDS=0V
VDS=250V, VGS=0V
VGS= ±25V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
Ratings
250
±30
16
64
50
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
250
±30
2.0
8.5
Ratings
typ
max
Unit
V
V
1.0 mA
±10 μA
3.0 V
14 S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408QA TI IM TC-00001320 No.8612-1/3



2SK2534
2SK2534
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Symbol
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Conditions
ID=8A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=16A, VGS=0V
IS=16A, di / dt=100A / μs
Ratings
min typ max
Unit
130 180 mΩ
1950
pF
455 pF
185 pF
28 ns
96 ns
500 ns
150 ns
1.0 1.5 V
180 ns
Package Dimensions
unit : mm (typ)
7002-001
8.2
7.8
6.2
3
0.6
12
1.0 1.0
2.54 2.54
5.08
10.0
6.0
0.3
0.6
1 : Gate
7.8 2 : Source
3 : Drain
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=100V
ID=8A
RL=12.5Ω
D VOUT
2SK2534
P.G 50Ω S
SANYO : ZP
ASO
2
100
7
IDP=64A
5
3
2 ID=16A
10
7
5
3
2
DC
PW10μs
1001m0sms1ms100μs
operation
10μs
1.0 Operation in this
7
5
area is limited by RDS(on).
3
2 Tc=25°C
0.1 Single pulse
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V
23 5
IT11458
PD -- Tc
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Ta -- °C
IT11459
No.8612-2/3







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