N-Channel Silicon MOSFET
Ordering number : EN8612
2SK2534
SANYO Semiconductors
DATA SHEET
2SK2534
N-Channel Silicon MOSFET
General-Purpose Sw...
Description
Ordering number : EN8612
2SK2534
SANYO Semiconductors
DATA SHEET
2SK2534
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% Tc=25˚C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) ⏐yfs⏐
ID=1mA, VGS=0V IG= ±100μA, VDS=0V VDS=250V, VGS=0V VGS= ±25V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A
Ratings 250 ±30 16 64 50 150
--55 to +150
Unit V V A A W °C °C
min 250 ±30
2.0 8.5
Ratings typ
max
Unit
V
V
1.0 mA
±10 μA
3.0 V
14 S
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein ...
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