EFFECT TRANSISTOR. 2SK2552 Datasheet

2SK2552 TRANSISTOR. Datasheet pdf. Equivalent


Part 2SK2552
Description N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Feature DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSIST.
Manufacture Renesas
Datasheet
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2SK2552
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK2552
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK2552 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
2SK2552
PACKAGE
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note1
VDSX
20
Gate to Drain Voltage
VGDO
–20
Drain Current
ID 10
Gate Current
Total Power Dissipation Note2
IG 10
PT 200
Junction Temperature
Tj 125
Storage Temperature
Tstg –55 to +125
V
V
mA
mA
mW
°C
°C
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
3
2
0.2
+0.1
–0
1
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
1: Source
2: Drain
3: Gate
EQUIVALENT CIRCUIT
Gate
Drain
Source
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15941EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002



2SK2552
2SK2552
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
IDSS VDS = 5.0 V, VGS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance
Forward Transfer Admittance
Input Capacitance
Noise Voltage
VGS(off)
| yfs1 |
| yfs2 |
Ciss
NV
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
See Test Circuit
MIN. TYP. MAX. UNIT
40 600 µA
0.1 1.0 V
350 µS
350 µS
7.0 8.0 pF
1.8 3.0 µV
IDSS RANK
MARKING
IDSS
(µA)
J2
40 to 70
J3
60 to 110
J4 J5 J6 J7
90 to 180
150 to 300 200 to 450 300 to 600
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
R = 1 k
JIS A
NV (r.m.s)
C = 10 pF
2 Data Sheet D15941EJ2V0DS







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