Gain Amplifier. LMH6503 Datasheet

LMH6503 Amplifier. Datasheet pdf. Equivalent


Part LMH6503
Description Linear Variable Gain Amplifier
Feature LMH6503 www.ti.com SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013 LMH6503 Wideband, Low Power, Line.
Manufacture etcTI
Datasheet
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LMH6503 Wideband, Low Power, Linear Variable Gain Amplifier LMH6503 Datasheet
LMH6503 www.ti.com SNOSA78E – OCTOBER 2003 – REVISED APRIL LMH6503 Datasheet
Recommendation Recommendation Datasheet LMH6503 Datasheet




LMH6503
LMH6503
www.ti.com
SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013
LMH6503 Wideband, Low Power, Linear Variable Gain Amplifier
Check for Samples: LMH6503
FEATURES
1
23 VS = ±5V, TA = 25°C, RF = 1k, RG = 174, RL =
100, AV = AV(MAX) = 10, Typical Values Unless
Specified.
• -3dB BW 135MHz
• Gain Control BW 100MHz
• Adjustment Range (Typical Over Temp) 70dB
• Gain Matching (Limit) ±0.7dB
• Slew Rate 1800V/µs
• Supply Current (No Load) 37mA
• Linear Output Current ±75mA
• Output Voltage (RL = 100) ±3.2V
• Input Voltage Noise 6.6nV/Hz
• Input Current Noise 2.4pA/Hz
• THD (20MHz, RL = 100, VO = 2VPP) 57dBc
• Replacement for CLC522
APPLICATIONS
• Variable Attenuator
• AGC
• Voltage Controller Filter
• Multiplier
DESCRIPTION
The LMH™6503 is a wideband, DC coupled,
differential input, voltage controlled gain stage
followed by a high-speed current feedback Op Amp
which can directly drive a low impedance load. Gain
adjustment range is more than 70dB for up to 10MHz.
Maximum gain is set by external components and the
gain can be reduced all the way to cut-off. Power
consumption is 370mW with a speed of 135MHz .
Output referred DC offset voltage is less than 350mV
over the entire gain control voltage range. Device-to-
device Gain matching is within 0.7dB at maximum
gain. Furthermore, gain at any VG is tested and the
tolerance is ensured. The output current feedback Op
Amp allows high frequency large signals (Slew Rate
= 1800V/μs) and can also drive heavy load current
(75mA). Differential inputs allow common mode
rejection in low level amplification or in applications
where signals are carried over relatively long wires.
For single ended operation, the unused input can
easily be tied to ground (or to a virtual half-supply in
single supply application). Inverting or non-inverting
gains could be obtained by choosing one input
polarity or the other.
To further increase versatility when used in a single
supply application, gain control range is set to be
from 1V to +1V relative to pin 11 potential (ground
pin). In single supply operation, this ground pin is tied
to a "virtual" half supply. Gain control pin has high
input impedance to simplify its drive requirement.
Gain control is linear in V/V throughout the gain
adjustment range. Maximum gain can be set to be
anywhere between 1V/V to 100V/V or higher. For
linear in dB gain control applications, see LMH6502
datasheet.
The LMH6503 is available in the SOIC-14 and
TSSOP-14 package.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LMH is a trademark of Texas Instruments.
2
All other trademarks are the property of their respective owners.
3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2013, Texas Instruments Incorporated



LMH6503
LMH6503
SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013
Typical Application
30
20 dB
11
10
10 85°C
0
-10
-20
25°C
-30
-40
-40°C
-40°C
85°C
25°C
9
8
7
6
5
4
-50 V/V 3
-60 2
-70
-80
-1.2
-0.8
-0.4
VIN_DIFF = ±0.1V
1
0
0 0.4 0.8 1.2
VG (V)
Figure 1. Gain vs. VG for Various Temperature
+VIN
R1
50:
-VIN
RG
170:
R2
50:
+5V
31
NC
14
RF
1k:
4
12
13
VOUT
LMH6503
5
10
2 RL
6 8 7 11 9
100:
-5V
www.ti.com
VG
Figure 2. AVMAX = 10V/V
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Copyright © 2003–2013, Texas Instruments Incorporated







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