P2503BDG

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30 25m ID 12A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C VDS VGS ID IDM PD Tj, Tstg 1.GATE 2.DRAIN 3.SOURCE LIMITS 30 ±20 12 10 30 32 22 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJc Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL MAXIMUM 3 75 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C LIMITS UNIT MIN TYP MAX 30 1 1.5 2.5 V ±250 nA 1 10 µA 1 SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 12A VDS = 5V, ID = 12A P2503BDG TO-252 Lead-...