Logic FET. P2503BDG Datasheet

P2503BDG FET. Datasheet pdf. Equivalent


Part P2503BDG
Description N-Channel Logic FET
Feature NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free .
Manufacture NIKO-SEM
Datasheet
Download P2503BDG Datasheet


P2503BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2503BDG Datasheet
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effec P2503BDG Datasheet
Recommendation Recommendation Datasheet P2503BDG Datasheet




P2503BDG
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 25m
ID
12A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
30
±20
12
10
30
32
22
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
LIMITS
UNIT
MIN TYP MAX
30
1 1.5 2.5
V
±250 nA
1
10 µA
1 SEP-30-2004



P2503BDG
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 12A
VDS = 5V, ID = 12A
P2503BDG
TO-252
Lead-Free
30 A
25 37
m
18 25
19 S
DYNAMIC
Input Capacitance
Ciss
790
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
175
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 12A
VDD = 10V
ID 1A, VGS = 10V, RGEN = 6
65
16
2.5
2.1
2.2 4.4
7.5 15
11.8 21.3
3.7 7.4
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = 1A, VGS = 0V
1.3
2.6
1
pF
nC
nS
A
V
REMARK: THE PRODUCT MARKED WITH “P2503BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 SEP-30-2004







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