P2503HVG

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2503HVG SOP-8 Lead Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30 25m ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C VDS VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL LIMITS 30 ±20 7 6 20 2 1.3 -55 to 150 UNITS V V A W °C MAXIMUM 62.5 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C LIMITS UNIT MIN TYP MAX 30 1 1.5 2.5 V ±100 nA 1 10 µA 1 AUG-13-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2503HVG SOP-8 Lead Free On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A VDS = 5V, ID = 7A 20 A 25 37 m 18 25 19 S DYNAMIC Input Capacit...