P-Channel FET. P2503NVG Datasheet

P2503NVG FET. Datasheet pdf. Equivalent


Part P2503NVG
Description N- & P-Channel FET
Feature NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2503NVG SOP-8 Lead-Free PRODUCT.
Manufacture NIKO-SEM
Datasheet
Download P2503NVG Datasheet


P2503NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMAR P2503NVG Datasheet
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Trans P2503NVG Datasheet
Recommendation Recommendation Datasheet P2503NVG Datasheet




P2503NVG
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 25mΩ
P-Channel -30 45mΩ
ID
7A
-5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -5
6 -4 A
20 -20
2
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1
P-Ch -1
1.5 2.5
-1.5 -2.5
V
1 May-12-2004



P2503NVG
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
Gate-Body Leakage
Zero Gate Voltage Drain Current
VDS = 0V, VGS = ±20V
N-Ch
IGSS
VDS = 0V, VGS = ±20V
P-Ch
VDS = 24V, VGS = 0V
N-Ch
VDS = -24V, VGS = 0V
P-Ch
IDSS VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch
±100
nA
±100
1
-1
µA
10
-10
On-State Drain Current1
ID(ON)
Drain-Source
Resistance1
On-State
RDS(ON)
Forward Transconductance1
gfs
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -4A
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
VDS = 5V, ID = 7A
VDS = -5V, ID = -5A
N-Ch 20
P-Ch -20
A
N-Ch
P-Ch
N-Ch
P-Ch
25 37
58 80
mΩ
18 25
34 45
N-Ch
P-Ch
19
11
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
N-Ch
Ciss
N-Channel
P-Ch
Coss
VGS = 0V, VDS = 10V, f = 1MHz N-Ch
P-Channel
P-Ch
Crss
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
P-Ch
Qg
N-Channel
VDS = 0.5V(BR)DSS, VGS = 10V,
N-Ch
P-Ch
ID = 7A
N-Ch
Qgs
P-Channel
P-Ch
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch
Qgd
ID = -5A
P-Ch
790
690
175
310
65
75
16
14
2.5
2.2
2.1
1.9
pF
nC
2 May-12-2004







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