Document
ASMT-Mx00 MoonstoneTM 1 W Power LED Light Source
Data Sheet
Description
The MoonstoneTM 1W Power LED Light Source is a high performance energy efficient device which can handle high thermal and high driving current. The exposed pad design has excellent heat transfer from the package to the motherboard.
The Cool White Power LED is available in various color temperature ranging from 4000K to 10000K and Warm White Power LED ranging from 2600K to 4000K.
The low profile package design is suitable for a wide variety of applications especially where height is a constraint.
The package is compatible with reflow soldering process. This will give more freedom and flexibility to the light source designer.
Applications
• Portable (flash light, bicycle head light)
• Reading light
• Architectural lighting
• Garden lighting
• Decorative lighting
Features
• Available in Red, Amber, Green, Blue, Cool White and Warm White color
• Energy efficient • Exposed pad for excellent heat transfer • Suitable for reflow soldering process • High current operation • Long operation life • Wide viewing angle • Silicone encapsulation • ESD Class HBM Class 3B (threshold > 8 kV) • MSL 2A for InGaN products • MSL 4 for AlInGaP products
Specifications
• AlInGaP technology for Red and Amber • 2.4 V (typ) at 350 mA for AlInGaP • InGaN technology for Green, Blue, Cool White and
Warm White • 3.6 V (typ) at 350 mA for InGaN • 120 viewing angle
Package Dimensions
10.00
3 Ø 5.26
Ø 8.00
8.50
1 Anode 2 Cathode 3 Heat Sink
Metal Slug
3.30 1.27
10.60 LED +
ZENER
8.50 −
2.00
1.30
1 2 0.81 5.08
Notes: 1. All dimensions are in millimeters. 2. Tolerance is ±0.1 mm unless otherwise specified. 3. Metal slug is connected to anode for electrically non-isolated option.
5.25
Device Selection Guide ( Tj = 25°C)
Part Number ASMT-MR00-AGH00 ASMT-MR00-AHJ00 ASMT-MA00-AGH00 ASMT-MG00 ASMT-MB00 ASMT-MW00 ASMT-MY00 ASMT-MWB1 ASMT-MYB1
Color Red
Amber Green Blue Cool White Warm White Cool White Diffused Warm White Diffused
Luminous
Flux,
f [1,2] V
(lm)
Min. Typ. Max.
25.5 35.0 43.0
33.0 40.0 56.0
25.5 35.0 43.0
43.0 60.0 73.0
11.5 15.0 25.5
43.0 60.0 73.0
43.0 50.0 73.0
43.0 55.0 73.0
43.0 46.0 73.0
Test Current (mA) 350 350 350 350 350 350 350 350 350
Notes 1. fV is the total luminous flux output as measured with an integrating sphere at 25 ms mono pulse condition. 2. Flux tolerance is ± 10%.
Dice Technology AlInGaP AlInGaP AlInGaP InGaN InGaN InGaN InGaN InGaN InGaN
2
Part Numbering System
ASMT-M x xx – x x1 x2 x3 x4
Packaging Option
Color Bin Selection
Maximum Flux Bin Selection
Minimum Flux Bin Selection
Dice Type N – InGaN A – AllnGaP
Silicone Type 00 – Non-diffused B1 – Diffused
Color R – Red A – Amber G - Green B - Blue W - Cool White Y - Warm White
Note: 1. Please refer to Page 8 for selection details.
Absolute Maximum Ratings (TA = 25°C) Parameter
DC Forward Current [1] Peak Pulsing Current [2] Power Dissipation for AlInGaP Power Dissipation for InGaN LED Junction Temperature for AlInGaP LED Junction Temperature for InGaN Operating Ambient Temperature Range Storage Temperature Range
ASMT-Mx00 / ASMT-MxB1 350 1000 1050 1400 125 110 -40 to +100 -40 to +120
Notes: 1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN. 2. Pulse condition duty factor = 10%, Frequency = 1kHz.
Units mA mA mW mW °C °C °C °C
3
Optical Characteristics at 350 mA (TJ = 25°C)
Part Number ASMT-MR00-AGH00 ASMT-MR00-AHJ00 ASMT-MA00-AGH00 ASMT-MG00 ASMT-MB00
Color Red Red Amber Green Blue
Peak Wavelength lPEAK (nm) Typ. 635
635
598
519
460
Dominant Wavelength lD [1] (nm) Typ. 625
625
590
525
467
Viewing Angle 2q1/2 [2] (°) Typ. 120
120
120
120
120
Luminous Efficiency (lm/W) Typ. 42
48
42
48
12
Part Number ASMT-MW00 ASMT-MY00 ASMT-MWB1 ASMT-MYB1
Color Cool White Warm White Cool White Diffused Warm White Diffused
Correlated Color Temperature, CCT (Kelvin)
Min. Max.
4000
10000
2600
4000
4000
10000
2600
4000
Viewing Angle 2q½ [2] (°) Typ.
110
110
110
110
Notes: 1. The dominant wavelength, λD, is derived from the CIE Chromaticity Diagram and represents the color of the device. 2. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
Luminous Efficiency (lm/W) Typ. 48
40
44
37
Electrical Characteristic at 350 mA (TJ = 25°C)
Forward Voltage
VF (Volts) at IF = 350mA
Dice Type
Min Typ. Max.
AlInGaP
2.0 2.4 3.0
InGaN
3.2 3.6 4.0
Notes: 1. RqJ-ms is Thermal Resistance from LED junction to metal slug.
Reverse Voltage VR (Volts) Max.
5
5
Thermal Resistance Rqj-ms (°C/W) [1] Typ.
12
10
4
RELATIVE INTENSITY
1.0 0.9 RED 0.8 AMBER 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
380 430 480 530 580 630 680 730 780 WAVELENGTH - nm
Figure 1. Relative Intensity vs. Wavelength for AlInGaP
FORWARD CURRENT - mA
500 450 400 350 300 250 200 150 100 50
0 0.00
0.50
1.00 1.50 2.00 FORW.