Planar Transistor. D45H11J3 Datasheet

D45H11J3 Transistor. Datasheet pdf. Equivalent


Part D45H11J3
Description Low Vcesat PNP Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE(sa.
Manufacture CYStech
Datasheet
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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar T D45H11J3 Datasheet
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D45H11J3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
D45H11J3
Features
Low VCE(sat)
High BVCEO
Excellent current gain characteristics
RoHS compliant package
Pb-free lead-free and halogen-free package
BVCEO
IC
RCESAT
Spec. No. : C607J3
Issued Date : 2005.07.11
Revised Date :2017.07.13
Page No. : 1/6
-80V
-8A
75mΩ
Symbol
D45H11J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
D45H11J3-0-T3-G
Package
TO-252
(RoHS compliant and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
D45H11J3
CYStek Product Specification



D45H11J3
CYStech Electronics Corp.
Spec. No. : C607J3
Issued Date : 2005.07.11
Revised Date :2017.07.13
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Note : 1. Single Pulse , Pw380μs,Duty2%.
2. When mounted on a PCB with the minimum pad size.
Limits
-80
-80
-5
-8
-16 (Note 1)
1.75 (Note 2)
20
71.4 (Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS)
ICEO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
ton
tstg
tf
Min.
-80
-
-
-
-
-
60
40
-
-
-
-
-
Typ.
-
-
-
-
-0.6
-1.0
-
-
40
230
135
500
100
Max.
-
-10
-10
-50
-1.0
-1.5
-
-
-
-
-
-
-
Unit
V
μA
μA
μA
V
V
-
-
MHz
pF
ns
ns
ns
Test Conditions
IC=-30mA, IB=0
VCE=-80V, IB=0
VCE=-80V, VBE=0
VEB=-5V, IC=0
IC=-8A, IB=-0.4A
IC=-8A, IB=-0.8A
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCE=-10V, IC=-500mA, f=20MHz
VCB=-10V, f=1MHz
IC=-5A, IB1=-IB2=-0.5A
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
D45H11J3
CYStek Product Specification





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