Planar Transistor. D45H11T3 Datasheet

D45H11T3 Transistor. Datasheet pdf. Equivalent


Part D45H11T3
Description Low Vcesat PNP Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11T3 Spec. No. : C607T3 Is.
Manufacture CYStech
Datasheet
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D45H11T3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
D45H11T3
Spec. No. : C607T3
Issued Date : 2020.01.20
Revised Date :
Page No. : 1/5
Features
Low VCE(sat)
High BVCEO
Excellent current gain characteristics
RoHS compliant package
Pb-free lead-free and halogen-free package
Symbol
D45H11J3
Outline
TO-126
BBase
CCollector
EEmitter
ECB
Ordering Information
Device
D45H11T3-0-BL-G
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box
30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
D45H11T3
CYStek Product Specification



D45H11T3
CYStech Electronics Corp.
Spec. No. : C607T3
Issued Date : 2020.01.20
Revised Date :
Page No. : 2/5
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw380μs,Duty2%.
2. When mounted on a PCB with the minimum pad size.
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
-80
-80
-5
-8
-16 (Note 1)
1.75 (Note 2)
20
71.4 (Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
C/W
C/W
C
C
Characteristics (Ta=25C)
Symbol
BVCEO(SUS)
ICEO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
ton
tstg
tf
Min.
-80
-
-
-
-
-
60
40
-
-
-
-
-
Typ.
-
-
-
-
-0.6
-1.0
-
-
40
230
135
500
100
Max.
-
-10
-10
-50
-1.0
-1.5
-
-
-
-
-
-
-
Unit
V
μA
μA
μA
V
V
-
-
MHz
pF
ns
ns
ns
Test Conditions
IC=-30mA, IB=0
VCE=-80V, IB=0
VCE=-80V, VBE=0
VEB=-5V, IC=0
IC=-8A, IB=-0.4A
IC=-8A, IB=-0.8A
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCE=-10V, IC=-500mA, f=20MHz
VCB=-10V, f=1MHz
IC=-5A, IB1=-IB2=-0.5A
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
D45H11T3
CYStek Product Specification







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