Operational Amplifiers. TLC2202 Datasheet

TLC2202 Amplifiers. Datasheet pdf. Equivalent


Part TLC2202
Description Operational Amplifiers
Feature TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS LOWĆNOISE PRECISION OPERATIONAL AMPLIFIERS S.
Manufacture etcTI
Datasheet
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TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS LOWĆ TLC2202 Datasheet
TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS LOWĆ TLC2202A Datasheet
TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS LOWĆ TLC2202B Datasheet
TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS LOWĆ TLC2202Y Datasheet
Recommendation Recommendation Datasheet TLC2202 Datasheet




TLC2202
TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOSLOWĆNOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
D B Grade Is 100% Tested for Noise
30 nV/Hz Max at f = 10 Hz
12 nV/Hz Max at f = 1 kHz
D Low Input Offset Voltage . . . 500 µV Max
D Excellent Offset Voltage Stability
With Temperature . . . 0.5 µV/°C Typ
D Rail-to-Rail Output Swing
description
The TLC220x, TLC220xA, TLC220xB, and
TLC220xY are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOSprocess. These devices combine the
noise performance of the lowest-noise JFET
amplifiers with the dc precision available
previously only in bipolar amplifiers. The
Advanced LinCMOSprocess uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
D Low Input Bias Current
1 pA Typ at TA = 25°C
D Common-Mode Input Voltage Range
Includes the Negative Rail
D Fully Specified For Both Single-Supply and
Split-Supply Operation
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
vs
FREQUENCY
60
VDD = 5 V
RS = 20
50 TA = 25°C
40
30
20
10
The combination of excellent DC and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
0
1 10 100 1 k 10 k
f − Frequency − Hz
The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from − 40 °C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of −55°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated. All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1997−2008, Texas Instruments Incorporated
On products compliant to MILĆPRFĆ38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1



TLC2202
TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOSLOWĆNOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
TLC2201 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
Vnmax
f = 10 Hz
AT 25°C
Vnmax
f = 1 kHz
AT 25°C
SMALL
OUTLINE†
CHIP
CARRIER
CERAMIC
DIP
PLASTIC
DIP
CHIP
FORM‡
(Y)
(D) (FK) (JG) (P)
200 µV 35 nV/Hz 15 nV/Hz TLC2201ACD
0°C to 70°C
200 µV 30 nV/Hz 12 nV/Hz TLC2201BCD
500 µV
— TLC2201CD
200 µV 35 nV/Hz 15 nV/Hz TLC2201AID
−40°C to 85°C 200 µV 30 nV/Hz 12 nV/Hz TLC2201BID
500 µV
— TLC2201ID
200 µV 35 nV/Hz 15 nV/Hz TLC2201AMD TLC2201AMFK TLC2201AMJG
−55°C to 125°C 200 µV 30 nV/Hz 12 nV/Hz TLC2201BMD TLC2201BMFK TLC2201BMJG
500 µV
— TLC2201MD TLC2201MFK TLC2201MJG
The D packages are available taped and reeled. Add R suffix to device type (e.g. TLC220xBCDR).
Chip forms are tested at 25°C only.
TLC2201ACP
TLC2201BCP
TLC2201CP
TLC2201AIP
TLC2201BIP
TLC2201IP
TLC2201AMP
TLC2201BMP
TLC2201MP
TLC2201Y
TLC2202 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
Vnmax
f = 10 Hz
AT 25°C
Vnmax
f = 1 kHz
AT 25°C
SMALL
OUTLINE†
PLASTIC
SMALL
OUTLINE
CHIP
CARRIER
CERAMIC
DIP
PLASTIC
DIP
CHIP
FORM‡
(Y)
(D) (PS) (FK) (JG) (P)
500 µV 30 nV/Hz 12 nV/Hz TLC2202BCD
0°C to 70°C
500 µV 35 nV/Hz 15 nV/Hz TLC2202ACD
1 mV
— TLC2202CD TLC2202CPSR
500 µV 30 nV/Hz 12 nV/Hz TLC2202BID
− 40°C to 85°C 500 µV 35 nV/Hz 15 nV/Hz TLC2202AID
1 mV
— TLC2202ID
500 µV 30 nV/Hz 12 nV/Hz TLC2202BMD — TLC2202BMFK TLC2202BMJG
− 55°C to 125°C 500 µV 35 nV/Hz 15 nV/Hz TLC2202AMD — TLC2202AMFK TLC2202AMJG
1 mV
— TLC2202MD — TLC2202MFK TLC2202MJG
The D packages are available taped and reeled. Add R suffix to device type (e.g. TLC220xBCDR).
Chip forms are tested at 25°C only.
TLC2202BCP
TLC2202ACP
TLC2202CP
TLC2202BIP
TLC2202AIP
TLC2202IP
TLC2202BMP
TLC2202AMP
TLC2202MP
TLC2202Y
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265







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