OPERATIONAL AMPLIFIERS. TLC25L4Y Datasheet

TLC25L4Y AMPLIFIERS. Datasheet pdf. Equivalent


Part TLC25L4Y
Description QUAD OPERATIONAL AMPLIFIERS
Feature TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B.
Manufacture etcTI
Datasheet
Download TLC25L4Y Datasheet


TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L TLC25L4Y Datasheet
Recommendation Recommendation Datasheet TLC25L4Y Datasheet




TLC25L4Y
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOSQUAD OPERATIONAL AMPLIFIERS
SLOS003G – JUNE 1983 – REVISED MARCH 2001
D A-Suffix Versions Offer 5-mV VIO
D B-Suffix Versions Offer 2-mV VIO
D Wide Range of Supply Voltages
1.4 V to 16 V
D True Single-Supply Operation
D Common-Mode Input Voltage Includes the
Negative Rail
D Low Noise . . . 25 nV/Hz Typ at f = 1 kHz
(High-Bias Version)
D, N, OR PW PACKAGE
(TOP VIEW)
1OUT
1IN –
1IN +
VDD
2IN +
2IN –
2OUT
1
2
3
4
5
6
7
14 4OUT
13 4IN –
12 4IN +
11 VDD – /GND
10 3IN +
9 2IN –
8 3OUT
description
The TLC254, TLC254A, TLC254B, TLC25L4,
symbol (each amplifier)
TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A
and TL25M4B are low-cost, low-power quad
operational amplifiers designed to operate with
single or dual supplies. These devices utilize the
IN + +
IN –
OUT
Texas Instruments silicon gate LinCMOS
process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV
maximum, very high input impedances, and extremely low input offset and bias currents. Because the input
common-mode range extends to the negative rail and the power consumption is extremely low, this series is
ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a
1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in degradation of the device parametric performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for these
devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit
using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of
these devices. Many features associated with bipolar technology are available with LinCMOS operational
amplifiers without the power penalties of traditional bipolar devices.
Available options
PACKAGED DEVICES
TA
VIOmax
AT 25°C
SMALL OUTLINE
PLASTIC DIP
TSSOP
CHIP FORM
(Y)
(D) (N) (PW)
10 mV
5 mV
2 mV
TLC254CD
TLC254ACD
TLC254BCD
TLC254CN
TLC254ACN
TLC254BCN
TLC254CPW
TLC254Y
0°C to 70°C
10 mV
5 mV
2 mV
TLC25L4CD
TLC25L4ACD
TLC25L2BCD
TLC25L4CN
TLC25L4ACN
TLC25L4BCN
TLC25L4CPW
TLC25L4Y
10 mV
5 mV
2 mV
TLC25M4CD
TLC25M4ACD
TLC25M4BCD
TLC25M4CN
TLC25M4ACN
TLC25M4BCN
TLC25M4CPW
TLC25M4Y
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips
are tested at 25°C.
LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 2001, Texas Instruments Incorporated
1



TLC25L4Y
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOSQUAD OPERATIONAL AMPLIFIERS
SLOS003G JUNE 1983 REVISED MARCH 2001
description (continued)
General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and
signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications
are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the
difficult problems associated with single-battery and solar-cell-powered applications. This series includes
devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and
the small-outline packages. The device is also available in chip form.
These devices are characterized for operation from 0°C to 70°C.
DEVICE FEATURES
PARAMETER
TLC25L4_C
(LOW BIAS)
Supply current (Typ)
40 µA
Slew rate (Typ)
0.04 V/µA
Input offset voltage (Max)
TLC254C, TLC25L4C, TLC25M4C
TLC254AC, TLC25L4AC, TLC25M4AC
TLC254BC, TLC25L4BC, TLC25M4BC
Offset voltage drift (Typ)
10 mV
5 mV
2 mV
0.1 µV/month
Offset voltage temperature coefficient (Typ)
0.7 µV/°C
Input bias current (Typ)
1 pA
Input offset current (Typ)
1 pA
The long-term drift value applies after the first month.
TLC25M4_C
(MEDIUM BIAS)
600 µA
0.6 V/µA
10 mV
5 mV
2 mV
0.1 µV/month
2 µV/°C
1 pA
1 pA
TLC254_C
(HIGH BIAS)
4000 µA
4.5 V/µA
10 mV
5 mV
2 mV
0.1 µV/month
5 µV/°C
1 pA
1 pA
equivalent schematic (each amplifier)
VDD
ESD-
IN + Protective
Network
ESD-
IN Protective
Network
OUT
VDD /GND
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265







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