1000W Surface Mount Transient Voltage Suppressors
4
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
1KSMBJ Series
1000W Surface Mount Transient Voltage Suppressors
Features
l P...
Description
4
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
1KSMBJ Series
1000W Surface Mount Transient Voltage Suppressors
Features
l Peak power dissipation 1000W @10 x 1000 us Pulse l Low profile package. l Excellent clamping capability. l Glass passivated junction. l Fast response time: typically less than 1ps from 0 Volts to BV min l Typical IR less than 1uA when VBR min above 12V. l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact) l ESD protection of data lines in accordance with IEC 61000-4-2 l EFT protection of data lines in accordance with IEC 61000-4-4 l Halogen free and RoHS compliant l Lead-free finish
SMB
Bi-directional
Cathode
Anode
Mechanical Characteristics
Uni-directional
CASE: SMB (DO-214AA) Molded Plastic over glass passivated junction. Mounting Position: Any Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device. Terminal: Solder plated
Maximum Ratings And Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Parameter Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1) Power Dissipation on Infinite Heat Sink at TL=50°C Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3) Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2. 3) Operating Junction Temperature Range Storage Temperature Range
Symbol
PPPM PD IPPM IFSM TJ TSTG
Value Min 1000
5 See Table 1
120 -55 to 150 -55 to 150
Units W W A A °C °C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above TA=...
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